Properties of Poly-Si Thin films and Their Transistors Fabricated Using Selective Excimer Laser Annealing

Tetsuya Goto; Kaori Saito; Fuminobu Imaizumi; Makoto Hatanaka; Masami Takimoto; Michinobu Mizumura; Jun Gotoh; Hirosi Ikenouc; Kazuo Udagawa; Junji Kido; Shigetoshi Sugawa

doi:10.23919/AM-FPD.2018.8437391

Properties of Poly-Si Thin films and Their Transistors Fabricated Using Selective Excimer Laser Annealing

Tetsuya Goto, Kaori Saito, Fuminobu Imaizumi, Makoto Hatanaka, Masami Takimoto, Michinobu Mizumura, Jun Gotoh, Hirosi Ikenouc, Kazuo Udagawa, Junji Kido, Shigetoshi Sugawa

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Selective laser annealing system was developed, and applied to fabricate low temperature poly-Si thin film transistors. The new system performs the laser annealing only for the selective area of TFT region by adopting micro lens array, which can apply the laser annealing even for large substrate, contrary to the conventional excimer laser annealing system having the limitation in substrate size due to the difficulty in obtaining uniform beam line. In this study, selectively-annealed poly-Si film structure and their TFT performance were investigated. Grain size increased as an increase in the laser energy density, and TFTs with the field effect mobility larger than 100 cm²V^-1s^-1 with the on-off ratio of drain current of 10⁶ or more could be obtained.

Original language	English
Title of host publication	AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9784990875350
DOIs	https://doi.org/10.23919/AM-FPD.2018.8437391
Publication status	Published - 2018 Aug 15
Event	25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018 - Kyoto, Japan Duration: 2018 Jul 3 → 2018 Jul 6

Publication series

Name	AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Conference

Conference	25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018
Country/Territory	Japan
City	Kyoto
Period	18/7/3 → 18/7/6

Access to Document

10.23919/AM-FPD.2018.8437391

Cite this

Goto, T., Saito, K., Imaizumi, F., Hatanaka, M., Takimoto, M., Mizumura, M., Gotoh, J., Ikenouc, H., Udagawa, K., Kido, J., & Sugawa, S. (2018). Properties of Poly-Si Thin films and Their Transistors Fabricated Using Selective Excimer Laser Annealing. In AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings Article 8437391 (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/AM-FPD.2018.8437391

Goto, Tetsuya ; Saito, Kaori ; Imaizumi, Fuminobu et al. / Properties of Poly-Si Thin films and Their Transistors Fabricated Using Selective Excimer Laser Annealing. AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

@inproceedings{b18185c0884f4262b7d877bfc16fdbb3,

title = "Properties of Poly-Si Thin films and Their Transistors Fabricated Using Selective Excimer Laser Annealing",

abstract = "Selective laser annealing system was developed, and applied to fabricate low temperature poly-Si thin film transistors. The new system performs the laser annealing only for the selective area of TFT region by adopting micro lens array, which can apply the laser annealing even for large substrate, contrary to the conventional excimer laser annealing system having the limitation in substrate size due to the difficulty in obtaining uniform beam line. In this study, selectively-annealed poly-Si film structure and their TFT performance were investigated. Grain size increased as an increase in the laser energy density, and TFTs with the field effect mobility larger than 100 cm2V-1s-1 with the on-off ratio of drain current of 106 or more could be obtained.",

author = "Tetsuya Goto and Kaori Saito and Fuminobu Imaizumi and Makoto Hatanaka and Masami Takimoto and Michinobu Mizumura and Jun Gotoh and Hirosi Ikenouc and Kazuo Udagawa and Junji Kido and Shigetoshi Sugawa",

note = "Publisher Copyright: {\textcopyright} 2018 FTFMD.; 25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018 ; Conference date: 03-07-2018 Through 06-07-2018",

year = "2018",

month = aug,

day = "15",

doi = "10.23919/AM-FPD.2018.8437391",

language = "English",

isbn = "9784990875350",

series = "AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices",

address = "United States",

}

Goto, T, Saito, K, Imaizumi, F, Hatanaka, M, Takimoto, M, Mizumura, M, Gotoh, J, Ikenouc, H, Udagawa, K, Kido, J & Sugawa, S 2018, Properties of Poly-Si Thin films and Their Transistors Fabricated Using Selective Excimer Laser Annealing. in AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings., 8437391, AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, Institute of Electrical and Electronics Engineers Inc., 25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018, Kyoto, Japan, 18/7/3. https://doi.org/10.23919/AM-FPD.2018.8437391

Properties of Poly-Si Thin films and Their Transistors Fabricated Using Selective Excimer Laser Annealing. / Goto, Tetsuya; Saito, Kaori; Imaizumi, Fuminobu et al.
AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. 8437391 (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Properties of Poly-Si Thin films and Their Transistors Fabricated Using Selective Excimer Laser Annealing

AU - Goto, Tetsuya

AU - Saito, Kaori

AU - Imaizumi, Fuminobu

AU - Hatanaka, Makoto

AU - Takimoto, Masami

AU - Mizumura, Michinobu

AU - Gotoh, Jun

AU - Ikenouc, Hirosi

AU - Udagawa, Kazuo

AU - Kido, Junji

AU - Sugawa, Shigetoshi

PY - 2018/8/15

Y1 - 2018/8/15

N2 - Selective laser annealing system was developed, and applied to fabricate low temperature poly-Si thin film transistors. The new system performs the laser annealing only for the selective area of TFT region by adopting micro lens array, which can apply the laser annealing even for large substrate, contrary to the conventional excimer laser annealing system having the limitation in substrate size due to the difficulty in obtaining uniform beam line. In this study, selectively-annealed poly-Si film structure and their TFT performance were investigated. Grain size increased as an increase in the laser energy density, and TFTs with the field effect mobility larger than 100 cm2V-1s-1 with the on-off ratio of drain current of 106 or more could be obtained.

AB - Selective laser annealing system was developed, and applied to fabricate low temperature poly-Si thin film transistors. The new system performs the laser annealing only for the selective area of TFT region by adopting micro lens array, which can apply the laser annealing even for large substrate, contrary to the conventional excimer laser annealing system having the limitation in substrate size due to the difficulty in obtaining uniform beam line. In this study, selectively-annealed poly-Si film structure and their TFT performance were investigated. Grain size increased as an increase in the laser energy density, and TFTs with the field effect mobility larger than 100 cm2V-1s-1 with the on-off ratio of drain current of 106 or more could be obtained.

UR - http://www.scopus.com/inward/record.url?scp=85053136430&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85053136430&partnerID=8YFLogxK

U2 - 10.23919/AM-FPD.2018.8437391

DO - 10.23919/AM-FPD.2018.8437391

M3 - Conference contribution

AN - SCOPUS:85053136430

SN - 9784990875350

T3 - AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

BT - AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2018

Y2 - 3 July 2018 through 6 July 2018

ER -

Goto T, Saito K, Imaizumi F, Hatanaka M, Takimoto M, Mizumura M et al. Properties of Poly-Si Thin films and Their Transistors Fabricated Using Selective Excimer Laser Annealing. In AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. 8437391. (AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). doi: 10.23919/AM-FPD.2018.8437391

Properties of Poly-Si Thin films and Their Transistors Fabricated Using Selective Excimer Laser Annealing

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this