Properties of semiconductor quantum dots and magnetic nanocrystals grown by molecular beam epitaxy

Masaharu Oshima, Takaaki Mano, Masaki Mlzuguchi, Ono Kanta, Hiroshi Fujioka, Hiroyuki Akinaga, Nobuyuki Koguchi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In order to realize a combined system of semiconductor and magnetic nanocrystals for advanced nanoelectronics, we tried to heteroepitaxially grow both InGaAs quantum dots on GaAs(001) substrates for laser applications and MnAs and/or MnSb nanocrystals for high-density magnetic recording media by using molecular beam epitaxy. InGaAs and Mn pnictide dots were grown by using modified droplet epitaxy and super Volmer-Weber epitaxy, respectively, taking advantages of self-organization, solid-phase crystallization and low surface energy, respectively. The InGaAs quantum dots exhibited a very sharp PL emission at 946 nm with a full width at half maximum of 21.6 meV, suggesting a drastic improvement in dot size uniformity and crystalline quality over the conventional Stranski-Krastanov dots. On the other hand, the MnAs and/or MnSb nanocrystals grown on sulfur-passivated GaAs(001) substrates show ferromagnetic properties with a size of 16 nm and a surface density of about 1011 cm-2.

Original languageEnglish
Pages (from-to)396-400
Number of pages5
JournalJournal of the Korean Physical Society
Issue number4
Publication statusPublished - 2001 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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