TY - JOUR
T1 - Properties of semiconductor quantum dots and magnetic nanocrystals grown by molecular beam epitaxy
AU - Oshima, Masaharu
AU - Mano, Takaaki
AU - Mlzuguchi, Masaki
AU - Kanta, Ono
AU - Fujioka, Hiroshi
AU - Akinaga, Hiroyuki
AU - Koguchi, Nobuyuki
PY - 2001/4/1
Y1 - 2001/4/1
N2 - In order to realize a combined system of semiconductor and magnetic nanocrystals for advanced nanoelectronics, we tried to heteroepitaxially grow both InGaAs quantum dots on GaAs(001) substrates for laser applications and MnAs and/or MnSb nanocrystals for high-density magnetic recording media by using molecular beam epitaxy. InGaAs and Mn pnictide dots were grown by using modified droplet epitaxy and super Volmer-Weber epitaxy, respectively, taking advantages of self-organization, solid-phase crystallization and low surface energy, respectively. The InGaAs quantum dots exhibited a very sharp PL emission at 946 nm with a full width at half maximum of 21.6 meV, suggesting a drastic improvement in dot size uniformity and crystalline quality over the conventional Stranski-Krastanov dots. On the other hand, the MnAs and/or MnSb nanocrystals grown on sulfur-passivated GaAs(001) substrates show ferromagnetic properties with a size of 16 nm and a surface density of about 1011 cm-2.
AB - In order to realize a combined system of semiconductor and magnetic nanocrystals for advanced nanoelectronics, we tried to heteroepitaxially grow both InGaAs quantum dots on GaAs(001) substrates for laser applications and MnAs and/or MnSb nanocrystals for high-density magnetic recording media by using molecular beam epitaxy. InGaAs and Mn pnictide dots were grown by using modified droplet epitaxy and super Volmer-Weber epitaxy, respectively, taking advantages of self-organization, solid-phase crystallization and low surface energy, respectively. The InGaAs quantum dots exhibited a very sharp PL emission at 946 nm with a full width at half maximum of 21.6 meV, suggesting a drastic improvement in dot size uniformity and crystalline quality over the conventional Stranski-Krastanov dots. On the other hand, the MnAs and/or MnSb nanocrystals grown on sulfur-passivated GaAs(001) substrates show ferromagnetic properties with a size of 16 nm and a surface density of about 1011 cm-2.
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M3 - Article
AN - SCOPUS:0035534668
SN - 0374-4884
VL - 38
SP - 396
EP - 400
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
IS - 4
ER -