TY - GEN
T1 - Proposal and demonstration of a new spin-orbit torque induced switching device
AU - Fukami, S.
AU - Anekawa, T.
AU - Zhang, C.
AU - Ohno, H.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/14
Y1 - 2015/7/14
N2 - Magnetic tunnel junction (MTJ) devices with three-terminal cell structure are promising building blocks for ultralow-power and high-performance memories and integrated circuits due to their high-speed and high-reliability features [1]. The three-terminal devices with spin-orbit torque (SOT) switching were recently proposed and have intensively investigated for a couple of years [2-7]. The SOT devices proposed so far are divided by their structure into two types. Here we propose a new structure of SOT device that combines the advantages of the existing two structures and demonstrate its basic operation.
AB - Magnetic tunnel junction (MTJ) devices with three-terminal cell structure are promising building blocks for ultralow-power and high-performance memories and integrated circuits due to their high-speed and high-reliability features [1]. The three-terminal devices with spin-orbit torque (SOT) switching were recently proposed and have intensively investigated for a couple of years [2-7]. The SOT devices proposed so far are divided by their structure into two types. Here we propose a new structure of SOT device that combines the advantages of the existing two structures and demonstrate its basic operation.
UR - http://www.scopus.com/inward/record.url?scp=84942436544&partnerID=8YFLogxK
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U2 - 10.1109/INTMAG.2015.7156648
DO - 10.1109/INTMAG.2015.7156648
M3 - Conference contribution
AN - SCOPUS:84942436544
T3 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
Y2 - 11 May 2015 through 15 May 2015
ER -