Proposal of local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and 2-dimensional imaging of trap distribution in SiO2/SiC interface

Norimichi Chinone; Ryoji Kosugi; Yasunori Tanaka; Shinsuke Harada; Hajime Okumura; Yasuo Cho

doi:10.1109/IPFA.2016.7564317

Proposal of local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and 2-dimensional imaging of trap distribution in SiO₂/SiC interface

Norimichi Chinone, Ryoji Kosugi, Yasunori Tanaka, Shinsuke Harada, Hajime Okumura, Yasuo Cho

Information Devices Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A new technique for microscopically evaluating insulator-semiconductor interface traps is proposed. The proposed technique is applied for SiO₂/SiC stack structure and 2-dimensional imaging of interface traps is performed.

Original language	English
Title of host publication	Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	360-364
Number of pages	5
ISBN (Electronic)	9781467382588
DOIs	https://doi.org/10.1109/IPFA.2016.7564317
Publication status	Published - 2016 Sept 9
Event	23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016 - Singapore, Singapore Duration: 2016 Jul 18 → 2016 Jul 21

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume	2016-September

Other

Other	23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016
Country/Territory	Singapore
City	Singapore
Period	16/7/18 → 16/7/21

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/IPFA.2016.7564317

Cite this

Chinone, N., Kosugi, R., Tanaka, Y., Harada, S., Okumura, H., & Cho, Y. (2016). Proposal of local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and 2-dimensional imaging of trap distribution in SiO₂/SiC interface. In Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016 (pp. 360-364). [7564317] (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2016-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA.2016.7564317

Proposal of local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and 2-dimensional imaging of trap distribution in SiO₂/SiC interface. / Chinone, Norimichi; Kosugi, Ryoji; Tanaka, Yasunori et al.
Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 360-364 7564317 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA; Vol. 2016-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chinone, N, Kosugi, R, Tanaka, Y, Harada, S, Okumura, H & Cho, Y 2016, Proposal of local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and 2-dimensional imaging of trap distribution in SiO₂/SiC interface. in Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016., 7564317, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, vol. 2016-September, Institute of Electrical and Electronics Engineers Inc., pp. 360-364, 23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016, Singapore, Singapore, 16/7/18. https://doi.org/10.1109/IPFA.2016.7564317

Chinone N, Kosugi R, Tanaka Y, Harada S, Okumura H, Cho Y. Proposal of local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and 2-dimensional imaging of trap distribution in SiO₂/SiC interface. In Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 360-364. 7564317. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2016.7564317

Chinone, Norimichi ; Kosugi, Ryoji ; Tanaka, Yasunori et al. / Proposal of local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and 2-dimensional imaging of trap distribution in SiO₂/SiC interface. Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 360-364 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{408d1aee38064d47bc12a17f4722f7f5,

title = "Proposal of local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and 2-dimensional imaging of trap distribution in SiO2/SiC interface",

abstract = "A new technique for microscopically evaluating insulator-semiconductor interface traps is proposed. The proposed technique is applied for SiO2/SiC stack structure and 2-dimensional imaging of interface traps is performed.",

author = "Norimichi Chinone and Ryoji Kosugi and Yasunori Tanaka and Shinsuke Harada and Hajime Okumura and Yasuo Cho",

year = "2016",

month = sep,

day = "9",

doi = "10.1109/IPFA.2016.7564317",

language = "English",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "360--364",

booktitle = "Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016",

note = "23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016 ; Conference date: 18-07-2016 Through 21-07-2016",

}

TY - GEN

T1 - Proposal of local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and 2-dimensional imaging of trap distribution in SiO2/SiC interface

AU - Chinone, Norimichi

AU - Kosugi, Ryoji

AU - Tanaka, Yasunori

AU - Harada, Shinsuke

AU - Okumura, Hajime

AU - Cho, Yasuo

PY - 2016/9/9

Y1 - 2016/9/9

N2 - A new technique for microscopically evaluating insulator-semiconductor interface traps is proposed. The proposed technique is applied for SiO2/SiC stack structure and 2-dimensional imaging of interface traps is performed.

AB - A new technique for microscopically evaluating insulator-semiconductor interface traps is proposed. The proposed technique is applied for SiO2/SiC stack structure and 2-dimensional imaging of interface traps is performed.

UR - http://www.scopus.com/inward/record.url?scp=84989813782&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84989813782&partnerID=8YFLogxK

U2 - 10.1109/IPFA.2016.7564317

DO - 10.1109/IPFA.2016.7564317

M3 - Conference contribution

AN - SCOPUS:84989813782

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

SP - 360

EP - 364

BT - Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2016

Y2 - 18 July 2016 through 21 July 2016

ER -