Proposal of new nonvolatile memory with magnetic nano-dots

Takeshi Sakaguchi; Youn Gi Hong; Motoki Kobayashi; Masaaki Takata; Hoon Choi; Jeoung Chill Shim; Hiroyuki Kurino; Mitsumasa Koyanagi

doi:10.1143/JJAP.43.2203

Proposal of new nonvolatile memory with magnetic nano-dots

Takeshi Sakaguchi, Youn Gi Hong, Motoki Kobayashi, Masaaki Takata, Hoon Choi, Jeoung Chill Shim, Hiroyuki Kurino, Mitsumasa Koyanagi

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

In this study, a new nonvolatile memory with magnetic nano-dots (MNDs) was proposed. A relatively large anisotropic change of gate current-voltage characteristics by the magnetization in magnetic non-volatile memory with Co nano floating gate and Ni-Fe control gate was obtained. A Co magnetic nano-dot film with very high dot density of 2 × 10₁₃ cm_-2 was successfully formed by sputtering with optimized target composition. A small anisotropic change of gate current-voltage characteristics by the magnetization in MND memory with Co MNDs and Ni-Fe control gate was observed.

Original language	English
Pages (from-to)	2203-2206
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	43
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.43.2203
Publication status	Published - 2004 Apr
Externally published	Yes

Keywords

Carrier tunneling probability
MND
Magnetic floating gate
Ni-Fe control gate
Retention characteristic

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.43.2203

Cite this

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title = "Proposal of new nonvolatile memory with magnetic nano-dots",

abstract = "In this study, a new nonvolatile memory with magnetic nano-dots (MNDs) was proposed. A relatively large anisotropic change of gate current-voltage characteristics by the magnetization in magnetic non-volatile memory with Co nano floating gate and Ni-Fe control gate was obtained. A Co magnetic nano-dot film with very high dot density of 2 × 1013 cm-2 was successfully formed by sputtering with optimized target composition. A small anisotropic change of gate current-voltage characteristics by the magnetization in MND memory with Co MNDs and Ni-Fe control gate was observed.",

keywords = "Carrier tunneling probability, MND, Magnetic floating gate, Ni-Fe control gate, Retention characteristic",

author = "Takeshi Sakaguchi and Hong, {Youn Gi} and Motoki Kobayashi and Masaaki Takata and Hoon Choi and Shim, {Jeoung Chill} and Hiroyuki Kurino and Mitsumasa Koyanagi",

year = "2004",

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T1 - Proposal of new nonvolatile memory with magnetic nano-dots

AU - Sakaguchi, Takeshi

AU - Hong, Youn Gi

AU - Kobayashi, Motoki

AU - Takata, Masaaki

AU - Choi, Hoon

AU - Shim, Jeoung Chill

AU - Kurino, Hiroyuki

AU - Koyanagi, Mitsumasa

PY - 2004/4

Y1 - 2004/4

N2 - In this study, a new nonvolatile memory with magnetic nano-dots (MNDs) was proposed. A relatively large anisotropic change of gate current-voltage characteristics by the magnetization in magnetic non-volatile memory with Co nano floating gate and Ni-Fe control gate was obtained. A Co magnetic nano-dot film with very high dot density of 2 × 1013 cm-2 was successfully formed by sputtering with optimized target composition. A small anisotropic change of gate current-voltage characteristics by the magnetization in MND memory with Co MNDs and Ni-Fe control gate was observed.

AB - In this study, a new nonvolatile memory with magnetic nano-dots (MNDs) was proposed. A relatively large anisotropic change of gate current-voltage characteristics by the magnetization in magnetic non-volatile memory with Co nano floating gate and Ni-Fe control gate was obtained. A Co magnetic nano-dot film with very high dot density of 2 × 1013 cm-2 was successfully formed by sputtering with optimized target composition. A small anisotropic change of gate current-voltage characteristics by the magnetization in MND memory with Co MNDs and Ni-Fe control gate was observed.

KW - Carrier tunneling probability

KW - MND

KW - Magnetic floating gate

KW - Ni-Fe control gate

KW - Retention characteristic

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JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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ER -

Proposal of new nonvolatile memory with magnetic nano-dots

Abstract

Keywords

ASJC Scopus subject areas

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