Proposed design principle of fluoride-based materials for deep ultraviolet light emitting devices

Nobuhiko Sarukura, Hidetoshi Murakami, Elmer Estacio, Shingo Ono, Riadh El Ouenzerfi, Marilou Cadatal, Takeshi Nishimatsu, Noriaki Terakubo, Hiroshi Mizuseki, Yoshiyuki Kawazoe, Akira Yoshikawa, Tsuguo Fukuda

Research output: Contribution to journalArticlepeer-review

42 Citations (Scopus)

Abstract

In this paper, the design principle of fluoride-based devices for deep ultraviolet emission is presented. Variations in band structure and lattice constant of LiBaxCaySr(1-x-y)F3 and Li(1-x)KxBa(1-y)MgyF3 are studied using ab initio calculations based on local density approximation. Results suggest that lattice-matched double-heterostructures of direct-band-gap compounds LiBaxCaySr(1-x-y)F3 on LiSrF3 and Li(1-x)KxBa(1-y)MgyF3 on either LiBaF3 or KMgF3 are sufficiently feasible to fabricate.

Original languageEnglish
Pages (from-to)15-17
Number of pages3
JournalOptical Materials
Volume30
Issue number1
DOIs
Publication statusPublished - 2007 Sept

Keywords

  • Band structure
  • Light emitting diode
  • Perovskite fluorides
  • Ultraviolet laser diode

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