Proton irradiation on AC-coupled silicon microstrip detectors

Y. Unno; N. Ujiie; F. Hinode; T. Kohriki; T. Kondo; H. Iwasaki; S. Terada; T. Ohmoto; M. Yoshikawa; H. Ohyama; T. Handa; Y. Iwata; T. Ohsugi; K. O'Shaughnessy; B. Rowe; al et al

Proton irradiation on AC-coupled silicon microstrip detectors

Y. Unno, N. Ujiie, F. Hinode, T. Kohriki, T. Kondo, H. Iwasaki, S. Terada, T. Ohmoto, M. Yoshikawa, H. Ohyama, T. Handa, Y. Iwata, T. Ohsugi, K. O'Shaughnessy, B. Rowe, al et al

Research Center for Electron Photon Science (ELPH)

High Energy Accelerator Research Organization, Tsukuba

Research output: Contribution to conference › Paper › peer-review

Abstract

To test the radiation tolerance of full-size detectors, four large-area AC-coupled single-sided silicon microstrip detectors were fabricated. The detectors had a size of 6 cm×3.4 cm and were made out of a 300 μm thick, high-resistivity, n-type silicon, simulating the p-side of the double-sided silicon microstrip detectors being developed. The AC coupling layer had either a single layer of SiO₂ or double layers of SiO₂ and Si₃N₄, in combination with the surface passivation of SiO₂ or Si₃N₄. The detectors were irradiated at room temperature by 500 MeV protons at TRIUMF to a fluence of 5.7×10¹³ protons/cm², promptly stored at 0°C after irradiation, and periodically measured over the following year. The full depletion voltages showed a substantial annealing and a gradual anti-annealing. The result was compared with the predictions of existing damage parameterization. Time variation of other characteristics, such as leakage current, interstrip and coupling capacitances, and strip-edge micro-discharges was also followed.

Original language	English
Pages	223-227
Number of pages	5
Publication status	Published - 1995
Event	Proceedings of the 1994 Nuclear Science Symposium and Medical Imaging Conference. Part 1 (of 4) - Norfolk, VA, USA Duration: 1994 Oct 30 → 1994 Nov 5

Conference

Conference	Proceedings of the 1994 Nuclear Science Symposium and Medical Imaging Conference. Part 1 (of 4)
City	Norfolk, VA, USA
Period	94/10/30 → 94/11/5

Cite this

Unno, Y., Ujiie, N., Hinode, F., Kohriki, T., Kondo, T., Iwasaki, H., Terada, S., Ohmoto, T., Yoshikawa, M., Ohyama, H., Handa, T., Iwata, Y., Ohsugi, T., O'Shaughnessy, K., Rowe, B., & et al, A. (1995). Proton irradiation on AC-coupled silicon microstrip detectors. 223-227. Paper presented at Proceedings of the 1994 Nuclear Science Symposium and Medical Imaging Conference. Part 1 (of 4), Norfolk, VA, USA.

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title = "Proton irradiation on AC-coupled silicon microstrip detectors",

abstract = "To test the radiation tolerance of full-size detectors, four large-area AC-coupled single-sided silicon microstrip detectors were fabricated. The detectors had a size of 6 cm×3.4 cm and were made out of a 300 μm thick, high-resistivity, n-type silicon, simulating the p-side of the double-sided silicon microstrip detectors being developed. The AC coupling layer had either a single layer of SiO2 or double layers of SiO2 and Si3N4, in combination with the surface passivation of SiO2 or Si3N4. The detectors were irradiated at room temperature by 500 MeV protons at TRIUMF to a fluence of 5.7×1013 protons/cm2, promptly stored at 0°C after irradiation, and periodically measured over the following year. The full depletion voltages showed a substantial annealing and a gradual anti-annealing. The result was compared with the predictions of existing damage parameterization. Time variation of other characteristics, such as leakage current, interstrip and coupling capacitances, and strip-edge micro-discharges was also followed.",

author = "Y. Unno and N. Ujiie and F. Hinode and T. Kohriki and T. Kondo and H. Iwasaki and S. Terada and T. Ohmoto and M. Yoshikawa and H. Ohyama and T. Handa and Y. Iwata and T. Ohsugi and K. O'Shaughnessy and B. Rowe and {et al}, al",

year = "1995",

language = "English",

pages = "223--227",

note = "Proceedings of the 1994 Nuclear Science Symposium and Medical Imaging Conference. Part 1 (of 4) ; Conference date: 30-10-1994 Through 05-11-1994",

}

Unno, Y, Ujiie, N, Hinode, F, Kohriki, T, Kondo, T, Iwasaki, H, Terada, S, Ohmoto, T, Yoshikawa, M, Ohyama, H, Handa, T, Iwata, Y, Ohsugi, T, O'Shaughnessy, K, Rowe, B & et al, A 1995, 'Proton irradiation on AC-coupled silicon microstrip detectors', Paper presented at Proceedings of the 1994 Nuclear Science Symposium and Medical Imaging Conference. Part 1 (of 4), Norfolk, VA, USA, 94/10/30 - 94/11/5 pp. 223-227.

TY - CONF

T1 - Proton irradiation on AC-coupled silicon microstrip detectors

AU - Unno, Y.

AU - Ujiie, N.

AU - Hinode, F.

AU - Kohriki, T.

AU - Kondo, T.

AU - Iwasaki, H.

AU - Terada, S.

AU - Ohmoto, T.

AU - Yoshikawa, M.

AU - Ohyama, H.

AU - Handa, T.

AU - Iwata, Y.

AU - Ohsugi, T.

AU - O'Shaughnessy, K.

AU - Rowe, B.

AU - et al, al

PY - 1995

Y1 - 1995

N2 - To test the radiation tolerance of full-size detectors, four large-area AC-coupled single-sided silicon microstrip detectors were fabricated. The detectors had a size of 6 cm×3.4 cm and were made out of a 300 μm thick, high-resistivity, n-type silicon, simulating the p-side of the double-sided silicon microstrip detectors being developed. The AC coupling layer had either a single layer of SiO2 or double layers of SiO2 and Si3N4, in combination with the surface passivation of SiO2 or Si3N4. The detectors were irradiated at room temperature by 500 MeV protons at TRIUMF to a fluence of 5.7×1013 protons/cm2, promptly stored at 0°C after irradiation, and periodically measured over the following year. The full depletion voltages showed a substantial annealing and a gradual anti-annealing. The result was compared with the predictions of existing damage parameterization. Time variation of other characteristics, such as leakage current, interstrip and coupling capacitances, and strip-edge micro-discharges was also followed.

AB - To test the radiation tolerance of full-size detectors, four large-area AC-coupled single-sided silicon microstrip detectors were fabricated. The detectors had a size of 6 cm×3.4 cm and were made out of a 300 μm thick, high-resistivity, n-type silicon, simulating the p-side of the double-sided silicon microstrip detectors being developed. The AC coupling layer had either a single layer of SiO2 or double layers of SiO2 and Si3N4, in combination with the surface passivation of SiO2 or Si3N4. The detectors were irradiated at room temperature by 500 MeV protons at TRIUMF to a fluence of 5.7×1013 protons/cm2, promptly stored at 0°C after irradiation, and periodically measured over the following year. The full depletion voltages showed a substantial annealing and a gradual anti-annealing. The result was compared with the predictions of existing damage parameterization. Time variation of other characteristics, such as leakage current, interstrip and coupling capacitances, and strip-edge micro-discharges was also followed.

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M3 - Paper

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SP - 223

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T2 - Proceedings of the 1994 Nuclear Science Symposium and Medical Imaging Conference. Part 1 (of 4)

Y2 - 30 October 1994 through 5 November 1994

ER -

Proton irradiation on AC-coupled silicon microstrip detectors

Abstract

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