Pulse-height loss in the signal readout circuit of compound semiconductor detectors

M. Nakhostin, K. Hitomi

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Compound semiconductor detectors such as CdTe, CdZnTe, HgI2 and TlBr are known to exhibit large variations in their charge collection times. This paper considers the effect of such variations on the measurement of induced charge pulses by using resistive feedback charge-sensitive preamplifiers. It is shown that, due to the finite decay-time constant of the preamplifiers, the capacitive decay during the signal readout leads to a variable deficit in the measurement of ballistic signals and a digital pulse processing method is employed to correct for it. The method is experimentally examined by using sampled pulses from a TlBr detector coupled to a charge-sensitive preamplifier with 150 μs of decay-time constant and 20 % improvement in the energy resolution of the detector at 662 keV is achieved. The implications of the capacitive decay on the correction of charge-trapping effect by using depth-sensing technique are also considered.

Original languageEnglish
Pages (from-to)146-150
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Publication statusPublished - 2018 Jun 11


  • Ballistic deficit effect
  • Compound semiconductor detectors
  • Digital signal processing
  • Pulse-height loss
  • Signal readout


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