Pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn)As magnetic tunnel junction

Daichi Chiba; T. Kita; F. Matsukura; H. Ohno

doi:10.1063/1.2170063

Pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn)As magnetic tunnel junction

Daichi Chiba, T. Kita, F. Matsukura, H. Ohno

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We have investigated the pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn) AsGaAs (Ga,Mn) As magnetic tunnel junction. Critical current to induce magnetization switching shows a linear dependence on pulse width from 10 to 1000 μs. The magnetic-field dependence appears to indicate that the observed current-induced magnetization switching proceeds through metastable magnetization structures.

Original language	English
Article number	08G514
Journal	Journal of Applied Physics
Volume	99
Issue number	8
DOIs	https://doi.org/10.1063/1.2170063
Publication status	Published - 2006

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title = "Pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn)As magnetic tunnel junction",

abstract = "We have investigated the pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn) AsGaAs (Ga,Mn) As magnetic tunnel junction. Critical current to induce magnetization switching shows a linear dependence on pulse width from 10 to 1000 μs. The magnetic-field dependence appears to indicate that the observed current-induced magnetization switching proceeds through metastable magnetization structures.",

author = "Daichi Chiba and T. Kita and F. Matsukura and H. Ohno",

note = "Funding Information: This work was partly supported by the IT Program of Research Revolution 2002 (RR2002) from MEXT, a Grant-in-Aid from MEXT, and the 21st Century COE Program “System Construction of Global-Network Oriented Information Electronics” at Tohoku University.",

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doi = "10.1063/1.2170063",

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volume = "99",

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T1 - Pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn)As magnetic tunnel junction

AU - Chiba, Daichi

AU - Kita, T.

AU - Matsukura, F.

AU - Ohno, H.

N1 - Funding Information: This work was partly supported by the IT Program of Research Revolution 2002 (RR2002) from MEXT, a Grant-in-Aid from MEXT, and the 21st Century COE Program “System Construction of Global-Network Oriented Information Electronics” at Tohoku University.

PY - 2006

Y1 - 2006

N2 - We have investigated the pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn) AsGaAs (Ga,Mn) As magnetic tunnel junction. Critical current to induce magnetization switching shows a linear dependence on pulse width from 10 to 1000 μs. The magnetic-field dependence appears to indicate that the observed current-induced magnetization switching proceeds through metastable magnetization structures.

AB - We have investigated the pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn) AsGaAs (Ga,Mn) As magnetic tunnel junction. Critical current to induce magnetization switching shows a linear dependence on pulse width from 10 to 1000 μs. The magnetic-field dependence appears to indicate that the observed current-induced magnetization switching proceeds through metastable magnetization structures.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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M1 - 08G514

ER -

Pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn)As magnetic tunnel junction

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