PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application

K. Yamamoto, S. Kubicek, A. Rothschild, R. Mitsuhashi, W. Deweerd, A. Veloso, M. Jurczak, S. Biesemans, S. De Gendt, S. Wickramanayaka, S. Hayashi, M. Niwa

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


HfSiON gate dielectrics are fabricated by oxidation of co-sputtered Hf and Si, followed by nitridation with NH3 gas. It is found that HfSiO film stays in an amorphous state after oxidation, while HfO2 film tends to crystallize. Due to its thermally robust properties of HfSiON, lower gate leakage and good uniformity are achieved even after high thermal treatment (above 1000 °C). A reduction in capacitance due to lower permittivity is compensated by the introduction of a Ni-FUSI electrode, where improved inversion capacitance leads to a higher on-state drive current.

Original languageEnglish
Pages (from-to)198-201
Number of pages4
JournalMicroelectronic Engineering
Issue numberSUPPL.
Publication statusPublished - 2005 Jun 17
Externally publishedYes
Event14th Biennial Conference on Insulating Films on Semiconductors -
Duration: 2005 Jun 222005 Jun 24


  • FUSI
  • Hafnium oxide
  • HfSiON
  • High-k gate
  • Oxidation
  • Physical vapor deposition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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