PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application

K. Yamamoto; S. Kubicek; A. Rothschild; R. Mitsuhashi; W. Deweerd; A. Veloso; M. Jurczak; S. Biesemans; S. De Gendt; S. Wickramanayaka; S. Hayashi; M. Niwa

doi:10.1016/j.mee.2005.04.068

PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application

K. Yamamoto, S. Kubicek, A. Rothschild, R. Mitsuhashi, W. Deweerd, A. Veloso, M. Jurczak, S. Biesemans, S. De Gendt, S. Wickramanayaka, S. Hayashi, M. Niwa

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

HfSiON gate dielectrics are fabricated by oxidation of co-sputtered Hf and Si, followed by nitridation with NH₃ gas. It is found that HfSiO film stays in an amorphous state after oxidation, while HfO₂ film tends to crystallize. Due to its thermally robust properties of HfSiON, lower gate leakage and good uniformity are achieved even after high thermal treatment (above 1000 °C). A reduction in capacitance due to lower permittivity is compensated by the introduction of a Ni-FUSI electrode, where improved inversion capacitance leads to a higher on-state drive current.

Original language	English
Pages (from-to)	198-201
Number of pages	4
Journal	Microelectronic Engineering
Volume	80
Issue number	SUPPL.
DOIs	https://doi.org/10.1016/j.mee.2005.04.068
Publication status	Published - 2005 Jun 17
Externally published	Yes
Event	14th Biennial Conference on Insulating Films on Semiconductors - Duration: 2005 Jun 22 → 2005 Jun 24

Keywords

FUSI
Hafnium oxide
HfSiON
High-k gate
Oxidation
Physical vapor deposition

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2005.04.068

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@article{b633c659742044ec98de14d46a6903d4,

title = "PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application",

abstract = "HfSiON gate dielectrics are fabricated by oxidation of co-sputtered Hf and Si, followed by nitridation with NH3 gas. It is found that HfSiO film stays in an amorphous state after oxidation, while HfO2 film tends to crystallize. Due to its thermally robust properties of HfSiON, lower gate leakage and good uniformity are achieved even after high thermal treatment (above 1000 °C). A reduction in capacitance due to lower permittivity is compensated by the introduction of a Ni-FUSI electrode, where improved inversion capacitance leads to a higher on-state drive current.",

keywords = "FUSI, Hafnium oxide, HfSiON, High-k gate, Oxidation, Physical vapor deposition",

author = "K. Yamamoto and S. Kubicek and A. Rothschild and R. Mitsuhashi and W. Deweerd and A. Veloso and M. Jurczak and S. Biesemans and {De Gendt}, S. and S. Wickramanayaka and S. Hayashi and M. Niwa",

year = "2005",

month = jun,

day = "17",

doi = "10.1016/j.mee.2005.04.068",

language = "English",

volume = "80",

pages = "198--201",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "SUPPL.",

note = "14th Biennial Conference on Insulating Films on Semiconductors ; Conference date: 22-06-2005 Through 24-06-2005",

}

TY - JOUR

T1 - PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application

AU - Yamamoto, K.

AU - Kubicek, S.

AU - Rothschild, A.

AU - Mitsuhashi, R.

AU - Deweerd, W.

AU - Veloso, A.

AU - Jurczak, M.

AU - Biesemans, S.

AU - De Gendt, S.

AU - Wickramanayaka, S.

AU - Hayashi, S.

AU - Niwa, M.

PY - 2005/6/17

Y1 - 2005/6/17

N2 - HfSiON gate dielectrics are fabricated by oxidation of co-sputtered Hf and Si, followed by nitridation with NH3 gas. It is found that HfSiO film stays in an amorphous state after oxidation, while HfO2 film tends to crystallize. Due to its thermally robust properties of HfSiON, lower gate leakage and good uniformity are achieved even after high thermal treatment (above 1000 °C). A reduction in capacitance due to lower permittivity is compensated by the introduction of a Ni-FUSI electrode, where improved inversion capacitance leads to a higher on-state drive current.

AB - HfSiON gate dielectrics are fabricated by oxidation of co-sputtered Hf and Si, followed by nitridation with NH3 gas. It is found that HfSiO film stays in an amorphous state after oxidation, while HfO2 film tends to crystallize. Due to its thermally robust properties of HfSiON, lower gate leakage and good uniformity are achieved even after high thermal treatment (above 1000 °C). A reduction in capacitance due to lower permittivity is compensated by the introduction of a Ni-FUSI electrode, where improved inversion capacitance leads to a higher on-state drive current.

KW - FUSI

KW - Hafnium oxide

KW - HfSiON

KW - High-k gate

KW - Oxidation

KW - Physical vapor deposition

UR - http://www.scopus.com/inward/record.url?scp=19944375496&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=19944375496&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2005.04.068

DO - 10.1016/j.mee.2005.04.068

M3 - Conference article

AN - SCOPUS:19944375496

SN - 0167-9317

VL - 80

SP - 198

EP - 201

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - SUPPL.

T2 - 14th Biennial Conference on Insulating Films on Semiconductors

Y2 - 22 June 2005 through 24 June 2005

ER -

PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application

Abstract

Keywords

ASJC Scopus subject areas

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