PVT growth of Cd1-xZnxTe(x ∼ 0.04) films sensitive to radial rays

Junichi Takahashi, Katsumi Mochizuki, Keitaro Hitomi, Tadayoshi Shoji

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1 Citation (Scopus)


Cd1-xZnxTe(x ∼ 0.04) poly-crystalline films with a thickness of less than 300 μm are grown on an ITO/glass substrate by physical vapor transport method, and the films are evaluated as a detector for radial rays. A reservoir chamber containing CdCl2 powders is provided at one end of the growth tube for obtaining films with high electrical resistance and for reducing the leakage current of the device. A relation between the growth conditions and the characteristics of the grown film is clarified, and the film grown under one of the suitable conditions shows sensitivity to radial rays.

Original languageEnglish
Pages (from-to)448-453
Number of pages6
JournalJournal of Crystal Growth
Issue number2-4
Publication statusPublished - 2004 Sept 1


  • A1. Characterization
  • A3. Physical vapor deposition processes
  • B1. Cadmium compounds
  • B2. Semiconducting II-VI materials


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