TY - JOUR
T1 - PVT growth of Cd1-xZnxTe(x ∼ 0.04) films sensitive to radial rays
AU - Takahashi, Junichi
AU - Mochizuki, Katsumi
AU - Hitomi, Keitaro
AU - Shoji, Tadayoshi
PY - 2004/9/1
Y1 - 2004/9/1
N2 - Cd1-xZnxTe(x ∼ 0.04) poly-crystalline films with a thickness of less than 300 μm are grown on an ITO/glass substrate by physical vapor transport method, and the films are evaluated as a detector for radial rays. A reservoir chamber containing CdCl2 powders is provided at one end of the growth tube for obtaining films with high electrical resistance and for reducing the leakage current of the device. A relation between the growth conditions and the characteristics of the grown film is clarified, and the film grown under one of the suitable conditions shows sensitivity to radial rays.
AB - Cd1-xZnxTe(x ∼ 0.04) poly-crystalline films with a thickness of less than 300 μm are grown on an ITO/glass substrate by physical vapor transport method, and the films are evaluated as a detector for radial rays. A reservoir chamber containing CdCl2 powders is provided at one end of the growth tube for obtaining films with high electrical resistance and for reducing the leakage current of the device. A relation between the growth conditions and the characteristics of the grown film is clarified, and the film grown under one of the suitable conditions shows sensitivity to radial rays.
KW - A1. Characterization
KW - A3. Physical vapor deposition processes
KW - B1. Cadmium compounds
KW - B2. Semiconducting II-VI materials
UR - http://www.scopus.com/inward/record.url?scp=4344682123&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=4344682123&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2004.05.068
DO - 10.1016/j.jcrysgro.2004.05.068
M3 - Article
AN - SCOPUS:4344682123
SN - 0022-0248
VL - 269
SP - 448
EP - 453
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 2-4
ER -