TY - GEN
T1 - PZT MEMS Actuator with Integrated Buried Piezoresistors for Position Control
AU - Vergara, Andrea
AU - Tsukamoto, Takashiro
AU - Fang, Weileun
AU - Tanaka, Shuji
N1 - Funding Information:
This study was supported by JSPS Grant-in-Aid for Scientific Research (B) No. 18H01390. A. Vergara was supported by Tohoku University GP-Mech Program.
Publisher Copyright:
© 2021 IEEE.
PY - 2021/1/25
Y1 - 2021/1/25
N2 - We have monolithically integrated a PZT thin film and buried Si piezoresistive sensors for piezoelectric MEMS actuators. The PZT thin film works as a sensor as well as an actuator, but the static position sensing is difficult unlike piezoresistors. On the other hand, the process compatibility of PZT with a Si piezoresistor is unclear, because the Si piezoresistor is very sensitive to impurities, surface charges and contaminations. In this study, PZT MEMS cantilevers with the buried Si piezoresistive sensors were successfully fabricated by a proposed fabrication process, and the material composition was analyzed by secondary ion mass spectrometry (SIMS) to study the process compatibility. The fabricated devices were actuated by the PZT thin film, showing the first resonance frequency at 6.3 kHz. The integrated position sensor could successfully detect the amplitude with a sensitivity, non-linearity and noise floor of 0.037 mV/pm, 0.75% and 1 × 10 V/√Hz, respectively.
AB - We have monolithically integrated a PZT thin film and buried Si piezoresistive sensors for piezoelectric MEMS actuators. The PZT thin film works as a sensor as well as an actuator, but the static position sensing is difficult unlike piezoresistors. On the other hand, the process compatibility of PZT with a Si piezoresistor is unclear, because the Si piezoresistor is very sensitive to impurities, surface charges and contaminations. In this study, PZT MEMS cantilevers with the buried Si piezoresistive sensors were successfully fabricated by a proposed fabrication process, and the material composition was analyzed by secondary ion mass spectrometry (SIMS) to study the process compatibility. The fabricated devices were actuated by the PZT thin film, showing the first resonance frequency at 6.3 kHz. The integrated position sensor could successfully detect the amplitude with a sensitivity, non-linearity and noise floor of 0.037 mV/pm, 0.75% and 1 × 10 V/√Hz, respectively.
KW - Buried piezoresistor
KW - Monolithic integration
KW - PZT thin film
KW - Piezoelectric actuator
UR - http://www.scopus.com/inward/record.url?scp=85103464660&partnerID=8YFLogxK
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U2 - 10.1109/MEMS51782.2021.9375422
DO - 10.1109/MEMS51782.2021.9375422
M3 - Conference contribution
AN - SCOPUS:85103464660
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 626
EP - 629
BT - 34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021
Y2 - 25 January 2021 through 29 January 2021
ER -