Quantitative Measurement of Active Dopant Density Distribution in Black Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy

Yasuo Cho, Beniamino Iandolo, Ole Hansen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We investigated quantitatively the carrier distribution in a phosphorous (P) diffused black Silicon (Si) solar cell using scanning nonlinear dielectric microscopy (SNDM). As a reference, we measured the carrier distribution on a flat Si sample fabricated under the same P diffusion conditions. The precise carrier distributions in the emitter were visualized, which revealed the feature of carrier distribution in the emitter of black Si solar cell. Super-higher-order-SNDM was also employed to perform a quantitative analysis of the depletion layer distribution. It was found that the carrier density profile and the depletion layer thickness is less regular in the black Si than in the flat emitter, suggesting that this fluctuation may affect the power conversion efficiency of black Si solar cell.

Original languageEnglish
Title of host publication2022 IEEE 49th Photovoltaics Specialists Conference, PVSC 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages461-463
Number of pages3
ISBN (Electronic)9781728161174
DOIs
Publication statusPublished - 2022
Event49th IEEE Photovoltaics Specialists Conference, PVSC 2022 - Philadelphia, United States
Duration: 2022 Jun 52022 Jun 10

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2022-June
ISSN (Print)0160-8371

Conference

Conference49th IEEE Photovoltaics Specialists Conference, PVSC 2022
Country/TerritoryUnited States
CityPhiladelphia
Period22/6/522/6/10

Keywords

  • black silicon solar cell
  • carrier profiling
  • depletion layer
  • scanning nonlinear dielectric microscopy
  • super-higher-order scanning nonlinear dielectric microscopy

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