Abstract
Using a scanning nonlinear dielectric microscopy (SNDM), we observed standard Si sample with epitaxial staircase structures, which has known dopant density values calibrated by using secondary ion mass spectroscopy (SIMS). As the result, good quantitative correlation between dopant density values and SNDM signals was obtained without the phenomenon of contrast reversal effect, which is associated with conventional scanning capacitance microscopy (SCM) measurements. Thus, it is expected that SNDM will be an effective method for observing the quantitative measurement of two-dimensional dopant profiling on semiconductor devices.
| Original language | English |
|---|---|
| Pages (from-to) | 14-19 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium Proceedings |
| Volume | 1025 |
| Publication status | Published - 2008 Dec 1 |
| Event | Nanoscale Phenomena in Functional Materials by Scanning Probe Microscopy - Boston, MA, United States Duration: 2007 Nov 26 → 2007 Nov 30 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering