Quantized conductance in InGaAs point contacts at high temperatures

Thomas Bever; Yoshiro Hirayama; Seigo Tarucha

doi:10.1143/JJAP.33.L800

Quantized conductance in InGaAs point contacts at high temperatures

Thomas Bever, Yoshiro Hirayama, Seigo Tarucha

Center for Science and Innovation in Spintronics (CSIS)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We used focused ion beam insulation writing to fabricate quantum point contacts in the two-dimensional electron gas of an InGaAs/lnAlAs heterostructure. The conductance as a function of voltage on an adjacent in-plane gate exhibited steps for temperatures up to 60 K. From the temperature and source-drain voltage and magnetic field dependence of the conductance steps, we estimated the one-dimensional subband spacing to be 15 meV.

Original language	English
Pages (from-to)	L800-L803
Journal	Japanese Journal of Applied Physics
Volume	33
Issue number	6
DOIs	https://doi.org/10.1143/JJAP.33.L800
Publication status	Published - 1994 Jun

Keywords

Focused ion beam
In-plane gate
InGaAs/lnAIAs heterostructure
Insulation writing
Quantized conductance

Access to Document

10.1143/JJAP.33.L800

Cite this

@article{74f732ab7c6640d1b18d9b97004c7ed9,

title = "Quantized conductance in InGaAs point contacts at high temperatures",

abstract = "We used focused ion beam insulation writing to fabricate quantum point contacts in the two-dimensional electron gas of an InGaAs/lnAlAs heterostructure. The conductance as a function of voltage on an adjacent in-plane gate exhibited steps for temperatures up to 60 K. From the temperature and source-drain voltage and magnetic field dependence of the conductance steps, we estimated the one-dimensional subband spacing to be 15 meV.",

keywords = "Focused ion beam, In-plane gate, InGaAs/lnAIAs heterostructure, Insulation writing, Quantized conductance",

author = "Thomas Bever and Yoshiro Hirayama and Seigo Tarucha",

year = "1994",

month = jun,

doi = "10.1143/JJAP.33.L800",

language = "English",

volume = "33",

pages = "L800--L803",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6",

}

TY - JOUR

T1 - Quantized conductance in InGaAs point contacts at high temperatures

AU - Bever, Thomas

AU - Hirayama, Yoshiro

AU - Tarucha, Seigo

PY - 1994/6

Y1 - 1994/6

N2 - We used focused ion beam insulation writing to fabricate quantum point contacts in the two-dimensional electron gas of an InGaAs/lnAlAs heterostructure. The conductance as a function of voltage on an adjacent in-plane gate exhibited steps for temperatures up to 60 K. From the temperature and source-drain voltage and magnetic field dependence of the conductance steps, we estimated the one-dimensional subband spacing to be 15 meV.

AB - We used focused ion beam insulation writing to fabricate quantum point contacts in the two-dimensional electron gas of an InGaAs/lnAlAs heterostructure. The conductance as a function of voltage on an adjacent in-plane gate exhibited steps for temperatures up to 60 K. From the temperature and source-drain voltage and magnetic field dependence of the conductance steps, we estimated the one-dimensional subband spacing to be 15 meV.

KW - Focused ion beam

KW - In-plane gate

KW - InGaAs/lnAIAs heterostructure

KW - Insulation writing

KW - Quantized conductance

UR - http://www.scopus.com/inward/record.url?scp=0028459566&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028459566&partnerID=8YFLogxK

U2 - 10.1143/JJAP.33.L800

DO - 10.1143/JJAP.33.L800

M3 - Article

AN - SCOPUS:0028459566

SN - 0021-4922

VL - 33

SP - L800-L803

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6

ER -

Quantized conductance in InGaAs point contacts at high temperatures

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this