Quantized conductance in InGaAs point contacts at high temperatures

Thomas Bever, Yoshiro Hirayama, Seigo Tarucha

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


We used focused ion beam insulation writing to fabricate quantum point contacts in the two-dimensional electron gas of an InGaAs/lnAlAs heterostructure. The conductance as a function of voltage on an adjacent in-plane gate exhibited steps for temperatures up to 60 K. From the temperature and source-drain voltage and magnetic field dependence of the conductance steps, we estimated the one-dimensional subband spacing to be 15 meV.

Original languageEnglish
Pages (from-to)L800-L803
JournalJapanese Journal of Applied Physics
Issue number6
Publication statusPublished - 1994 Jun


  • Focused ion beam
  • In-plane gate
  • InGaAs/lnAIAs heterostructure
  • Insulation writing
  • Quantized conductance


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