Quantum GaAs nanodisk light emitting diode fabricated by ultimate top-down neutral beam etching

Akio Higo; Takayuki Kiba; Yosuke Tamura; Cedric Thomas; Yunpeng Wang; Hassanet Sodabanlu; Junichi Takayama; Masakazu Sugiyama; Yoshiaki Nakano; Ichiro Yamashita; Akihiro Murayama; Seiji Samukawa

doi:10.1109/ISLC.2014.199

Quantum GaAs nanodisk light emitting diode fabricated by ultimate top-down neutral beam etching

Akio Higo, Takayuki Kiba, Yosuke Tamura, Cedric Thomas, Yunpeng Wang, Hassanet Sodabanlu, Junichi Takayama, Masakazu Sugiyama, Yoshiaki Nakano, Ichiro Yamashita, Akihiro Murayama, Seiji Samukawa

Innovative Energy Research Center

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Quantum dots (QDs) photonic devices based on III-V compound semiconductor are very attractive optoelectronic due to their thermal independence, low power consumption, and high-speed modulation. We have developed a defect-free, ultimate top-down nanofabrication process for sub-20-nm-diameter GaAs quantum nanodisks (NDs) by employing a bio template and neutral beam etching, and produced 8-nm-thick GaAs NDs embedded in an AlGaAs barrier regrown by the metal organic vapour phase epitaxy (MOVPE). We successfully fabricated a light emitting diode structure and observed the light emission from the quantum energy levels of NDs.

Original language	English
Title of host publication	Conference Digest - IEEE International Semiconductor Laser Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	133-134
Number of pages	2
ISBN (Electronic)	9781479957217
DOIs	https://doi.org/10.1109/ISLC.2014.199
Publication status	Published - 2014 Dec 16
Event	2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 - Palma de Mallorca, Spain Duration: 2014 Sept 7 → 2014 Sept 10

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)	0899-9406

Other

Other	2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014
Country/Territory	Spain
City	Palma de Mallorca
Period	14/9/7 → 14/9/10

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/ISLC.2014.199

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Higo, A., Kiba, T., Tamura, Y., Thomas, C., Wang, Y., Sodabanlu, H., Takayama, J., Sugiyama, M., Nakano, Y., Yamashita, I., Murayama, A., & Samukawa, S. (2014). Quantum GaAs nanodisk light emitting diode fabricated by ultimate top-down neutral beam etching. In Conference Digest - IEEE International Semiconductor Laser Conference (pp. 133-134). [6987486] (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2014.199

Quantum GaAs nanodisk light emitting diode fabricated by ultimate top-down neutral beam etching. / Higo, Akio; Kiba, Takayuki; Tamura, Yosuke et al.

Conference Digest - IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 133-134 6987486 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Higo, A, Kiba, T, Tamura, Y, Thomas, C, Wang, Y, Sodabanlu, H, Takayama, J, Sugiyama, M, Nakano, Y, Yamashita, I, Murayama, A & Samukawa, S 2014, Quantum GaAs nanodisk light emitting diode fabricated by ultimate top-down neutral beam etching. in Conference Digest - IEEE International Semiconductor Laser Conference., 6987486, Conference Digest - IEEE International Semiconductor Laser Conference, Institute of Electrical and Electronics Engineers Inc., pp. 133-134, 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014, Palma de Mallorca, Spain, 14/9/7. https://doi.org/10.1109/ISLC.2014.199

Higo A, Kiba T, Tamura Y, Thomas C, Wang Y, Sodabanlu H et al. Quantum GaAs nanodisk light emitting diode fabricated by ultimate top-down neutral beam etching. In Conference Digest - IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc. 2014. p. 133-134. 6987486. (Conference Digest - IEEE International Semiconductor Laser Conference). doi: 10.1109/ISLC.2014.199

@inproceedings{7ddd323c5a974358a3d76a8524760704,

title = "Quantum GaAs nanodisk light emitting diode fabricated by ultimate top-down neutral beam etching",

abstract = "Quantum dots (QDs) photonic devices based on III-V compound semiconductor are very attractive optoelectronic due to their thermal independence, low power consumption, and high-speed modulation. We have developed a defect-free, ultimate top-down nanofabrication process for sub-20-nm-diameter GaAs quantum nanodisks (NDs) by employing a bio template and neutral beam etching, and produced 8-nm-thick GaAs NDs embedded in an AlGaAs barrier regrown by the metal organic vapour phase epitaxy (MOVPE). We successfully fabricated a light emitting diode structure and observed the light emission from the quantum energy levels of NDs.",

author = "Akio Higo and Takayuki Kiba and Yosuke Tamura and Cedric Thomas and Yunpeng Wang and Hassanet Sodabanlu and Junichi Takayama and Masakazu Sugiyama and Yoshiaki Nakano and Ichiro Yamashita and Akihiro Murayama and Seiji Samukawa",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 ; Conference date: 07-09-2014 Through 10-09-2014",

year = "2014",

month = dec,

day = "16",

doi = "10.1109/ISLC.2014.199",

language = "English",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "133--134",

booktitle = "Conference Digest - IEEE International Semiconductor Laser Conference",

}

TY - GEN

T1 - Quantum GaAs nanodisk light emitting diode fabricated by ultimate top-down neutral beam etching

AU - Higo, Akio

AU - Kiba, Takayuki

AU - Tamura, Yosuke

AU - Thomas, Cedric

AU - Wang, Yunpeng

AU - Sodabanlu, Hassanet

AU - Takayama, Junichi

AU - Sugiyama, Masakazu

AU - Nakano, Yoshiaki

AU - Yamashita, Ichiro

AU - Murayama, Akihiro

AU - Samukawa, Seiji

PY - 2014/12/16

Y1 - 2014/12/16

N2 - Quantum dots (QDs) photonic devices based on III-V compound semiconductor are very attractive optoelectronic due to their thermal independence, low power consumption, and high-speed modulation. We have developed a defect-free, ultimate top-down nanofabrication process for sub-20-nm-diameter GaAs quantum nanodisks (NDs) by employing a bio template and neutral beam etching, and produced 8-nm-thick GaAs NDs embedded in an AlGaAs barrier regrown by the metal organic vapour phase epitaxy (MOVPE). We successfully fabricated a light emitting diode structure and observed the light emission from the quantum energy levels of NDs.

AB - Quantum dots (QDs) photonic devices based on III-V compound semiconductor are very attractive optoelectronic due to their thermal independence, low power consumption, and high-speed modulation. We have developed a defect-free, ultimate top-down nanofabrication process for sub-20-nm-diameter GaAs quantum nanodisks (NDs) by employing a bio template and neutral beam etching, and produced 8-nm-thick GaAs NDs embedded in an AlGaAs barrier regrown by the metal organic vapour phase epitaxy (MOVPE). We successfully fabricated a light emitting diode structure and observed the light emission from the quantum energy levels of NDs.

UR - http://www.scopus.com/inward/record.url?scp=84920157703&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84920157703&partnerID=8YFLogxK

U2 - 10.1109/ISLC.2014.199

DO - 10.1109/ISLC.2014.199

M3 - Conference contribution

AN - SCOPUS:84920157703

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 133

EP - 134

BT - Conference Digest - IEEE International Semiconductor Laser Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014

Y2 - 7 September 2014 through 10 September 2014

ER -

Quantum GaAs nanodisk light emitting diode fabricated by ultimate top-down neutral beam etching

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