Quantum Hall effect in back-gated InAs/GaSb heterostructures under a tilted magnetic field

K. Suzuki, S. Miyashita, K. Takashina, Y. Hirayama

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


We investigate the quantum Hall effect (QHE) in the InAs/GaSb hybridized electron-hole system grown on a conductive InAs substrate which act as a back-gate. In these samples, the electron density is constant and the hole density is controlled by the gate-voltage. Under a magnetic field perpendicular to the sample plane, the QHE appears along integer Landau-level (LL) filling factors of the net-carriers, where the net-carrier density is the difference between the electron and hole densities. In addition, longitudinal resistance maxima corresponding to the crossing of the extended states of the original electron and hole LLs make the QHE regions along integer-νnet discontinuous. Under tilted magnetic fields, these Rxx maxima disappear in the high magnetic field region. The results show that the in-plane magnetic field component enhances the electron-hole hybridization and the formation of minigaps at LL crossings.

Original languageEnglish
Pages (from-to)232-235
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number3-4
Publication statusPublished - 2004 Jan
EventProceedings of the 11th International Conference on Narrow Gap - Buffalo, NY., United States
Duration: 2003 Jun 162003 Jun 20


  • Back-gate
  • Electron-hole hybridization
  • Quantum Hall effect


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