Quantum hall effect in polar oxide heterostructures

Atsushi Tsukazaki; A. Ohtomo; Tomohiro Kita; Y. Ohno; Hideo Ohno; M. Kawasaki

doi:10.1126/science.1137430

Quantum hall effect in polar oxide heterostructures

Atsushi Tsukazaki, A. Ohtomo, Tomohiro Kita, Y. Ohno, Hideo Ohno, M. Kawasaki

Research output: Contribution to journal › Article › peer-review

525 Citations (Scopus)

Abstract

We observed Shubnikov-de Haas oscillation and the quantum Hall effect in a high-mobility two-dimensional electron gas in polar ZnO/Mg_xZn _1-xO heterostructures grown by laser molecular beam epitaxy. The electron density could be controlled in a range of 0.7 × 10¹² to 3.7 × 10¹² per square centimeter by tuning the magnesium content in the barriers and the growth polarity. From the temperature dependence of the oscillation amplitude, the effective mass of the two-dimensional electrons was derived as 0.32 ± 0.03 times the free electron mass. Demonstration of the quantum Hall effect in an oxide heterostructure presents the possibility of combining quantum Hall physics with the versatile functionality of metal oxides in complex heterostructures.

Original language	English
Pages (from-to)	1388-1391
Number of pages	4
Journal	Science
Volume	315
Issue number	5817
DOIs	https://doi.org/10.1126/science.1137430
Publication status	Published - 2007 Mar 9

ASJC Scopus subject areas

General

Access to Document

10.1126/science.1137430

Cite this

@article{b2407616151c47d6ac3a3ea4b9ff71b4,

title = "Quantum hall effect in polar oxide heterostructures",

abstract = "We observed Shubnikov-de Haas oscillation and the quantum Hall effect in a high-mobility two-dimensional electron gas in polar ZnO/MgxZn 1-xO heterostructures grown by laser molecular beam epitaxy. The electron density could be controlled in a range of 0.7 × 1012 to 3.7 × 1012 per square centimeter by tuning the magnesium content in the barriers and the growth polarity. From the temperature dependence of the oscillation amplitude, the effective mass of the two-dimensional electrons was derived as 0.32 ± 0.03 times the free electron mass. Demonstration of the quantum Hall effect in an oxide heterostructure presents the possibility of combining quantum Hall physics with the versatile functionality of metal oxides in complex heterostructures.",

author = "Atsushi Tsukazaki and A. Ohtomo and Tomohiro Kita and Y. Ohno and Hideo Ohno and M. Kawasaki",

year = "2007",

month = mar,

day = "9",

doi = "10.1126/science.1137430",

language = "English",

volume = "315",

pages = "1388--1391",

journal = "Science",

issn = "0036-8075",

publisher = "American Association for the Advancement of Science",

number = "5817",

}

TY - JOUR

T1 - Quantum hall effect in polar oxide heterostructures

AU - Tsukazaki, Atsushi

AU - Ohtomo, A.

AU - Kita, Tomohiro

AU - Ohno, Y.

AU - Ohno, Hideo

AU - Kawasaki, M.

PY - 2007/3/9

Y1 - 2007/3/9

N2 - We observed Shubnikov-de Haas oscillation and the quantum Hall effect in a high-mobility two-dimensional electron gas in polar ZnO/MgxZn 1-xO heterostructures grown by laser molecular beam epitaxy. The electron density could be controlled in a range of 0.7 × 1012 to 3.7 × 1012 per square centimeter by tuning the magnesium content in the barriers and the growth polarity. From the temperature dependence of the oscillation amplitude, the effective mass of the two-dimensional electrons was derived as 0.32 ± 0.03 times the free electron mass. Demonstration of the quantum Hall effect in an oxide heterostructure presents the possibility of combining quantum Hall physics with the versatile functionality of metal oxides in complex heterostructures.

AB - We observed Shubnikov-de Haas oscillation and the quantum Hall effect in a high-mobility two-dimensional electron gas in polar ZnO/MgxZn 1-xO heterostructures grown by laser molecular beam epitaxy. The electron density could be controlled in a range of 0.7 × 1012 to 3.7 × 1012 per square centimeter by tuning the magnesium content in the barriers and the growth polarity. From the temperature dependence of the oscillation amplitude, the effective mass of the two-dimensional electrons was derived as 0.32 ± 0.03 times the free electron mass. Demonstration of the quantum Hall effect in an oxide heterostructure presents the possibility of combining quantum Hall physics with the versatile functionality of metal oxides in complex heterostructures.

UR - http://www.scopus.com/inward/record.url?scp=33947162461&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947162461&partnerID=8YFLogxK

U2 - 10.1126/science.1137430

DO - 10.1126/science.1137430

M3 - Article

C2 - 17255474

AN - SCOPUS:33947162461

SN - 0036-8075

VL - 315

SP - 1388

EP - 1391

JO - Science

JF - Science

IS - 5817

ER -

Quantum hall effect in polar oxide heterostructures

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this