Quantum interference effects in the magnetopiezoresistance of InAs/AlGaSb quasi-one-dimensional electron systems

H. Yamaguchi; Y. Tokura; S. Miyashia; Y. Hirayama

doi:10.1103/PhysRevLett.93.036603

Quantum interference effects in the magnetopiezoresistance of InAs/AlGaSb quasi-one-dimensional electron systems

H. Yamaguchi, Y. Tokura, S. Miyashia, Y. Hirayama

Center for Science and Innovation in Spintronics (CSIS)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The Magnetopiezoresistance (MRP) of a micromechanical InAs/AlGaSb conductive cantilever at liquid helium temperatures were studied. The MRP curve showed aperiodic but reproducible oscillation, which were similar to the differential magnetoresistance curve obtained for the same devices. The study suggests that the quantum interference effects that cause the conductance fluctuations in the magnetoresistance were responsible for the behavior of the magnetopiezoresistance. It was also suggested that that the large change in the Piezoresistance (PR) were induced by the quantum interference in the Quasi-one-dimensional (QID) channels in the cantilever supports.

Original language	English
Article number	036603
Pages (from-to)	036603-1-036603-4
Journal	Physical Review Letters
Volume	93
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevLett.93.036603
Publication status	Published - 2004 Jul 16

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title = "Quantum interference effects in the magnetopiezoresistance of InAs/AlGaSb quasi-one-dimensional electron systems",

abstract = "The Magnetopiezoresistance (MRP) of a micromechanical InAs/AlGaSb conductive cantilever at liquid helium temperatures were studied. The MRP curve showed aperiodic but reproducible oscillation, which were similar to the differential magnetoresistance curve obtained for the same devices. The study suggests that the quantum interference effects that cause the conductance fluctuations in the magnetoresistance were responsible for the behavior of the magnetopiezoresistance. It was also suggested that that the large change in the Piezoresistance (PR) were induced by the quantum interference in the Quasi-one-dimensional (QID) channels in the cantilever supports.",

author = "H. Yamaguchi and Y. Tokura and S. Miyashia and Y. Hirayama",

note = "Funding Information: This study is supported by NEDO International Joint Research Program, “ Nano-elasticity .”",

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AU - Yamaguchi, H.

AU - Tokura, Y.

AU - Miyashia, S.

AU - Hirayama, Y.

N1 - Funding Information: This study is supported by NEDO International Joint Research Program, “ Nano-elasticity .”

PY - 2004/7/16

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N2 - The Magnetopiezoresistance (MRP) of a micromechanical InAs/AlGaSb conductive cantilever at liquid helium temperatures were studied. The MRP curve showed aperiodic but reproducible oscillation, which were similar to the differential magnetoresistance curve obtained for the same devices. The study suggests that the quantum interference effects that cause the conductance fluctuations in the magnetoresistance were responsible for the behavior of the magnetopiezoresistance. It was also suggested that that the large change in the Piezoresistance (PR) were induced by the quantum interference in the Quasi-one-dimensional (QID) channels in the cantilever supports.

AB - The Magnetopiezoresistance (MRP) of a micromechanical InAs/AlGaSb conductive cantilever at liquid helium temperatures were studied. The MRP curve showed aperiodic but reproducible oscillation, which were similar to the differential magnetoresistance curve obtained for the same devices. The study suggests that the quantum interference effects that cause the conductance fluctuations in the magnetoresistance were responsible for the behavior of the magnetopiezoresistance. It was also suggested that that the large change in the Piezoresistance (PR) were induced by the quantum interference in the Quasi-one-dimensional (QID) channels in the cantilever supports.

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Quantum interference effects in the magnetopiezoresistance of InAs/AlGaSb quasi-one-dimensional electron systems

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