Quantum transport through a disordered array of Ge-vacancy defects in silicon for application in quantum technologies

Chemistry

• Quantum Transport 100%
• Conductivity 50%
• Doping Material 50%
• Electronic Property 50%
• Ion Implantation 50%
• Crystal Vacancy 50%
• Reaction Temperature 50%
• Atom 50%
• Ambient Reaction Temperature 50%
• Application 50%
• Engineering Process 50%
• Disorder 50%

Physics

• Silicon 100%
• Room Temperature 50%
• Ion Implantation 50%
• Defects 50%
• Temperature 50%
• Atoms 50%
• Utilization 50%
• Differences 50%
• Technology 50%
• Arrays 50%

Material Science

• Theoretical Calculation 50%
• Doping (Additives) 50%
• Defect 50%
• Vacancy 50%