@inproceedings{9a13cf023a6542029dbb467315d51dbc,
title = "Quarter-micron selective-epitaxial-silicon refilled trench (SRT) isolation technology with substrate shield",
abstract = "In order to realize high-density and stress-free field isolation for future ULSIs, the authors propose a selective-epitaxial-silicon refilled trench (SRT) isolation. The SRT isolation structure consists of a thin insulator film on the trench sidewalls, a selective-epitaxial-growth (SEG) silicon layer refilling the trench, and a capping oxide covering the trench openings. By using this isolation, the number of isolation process steps can be reduced to 60% of the number for a conventional process, and the stress induced by the thermal process can be minimal. The authors have succeeded in fabricating a 0.2-μ m isolation structure and have confirmed its excellent characteristics.",
keywords = "Fabrication, Insulation, Isolation technology, Planarization, Semiconductor films, Silicon, Substrates, Surface treatment, Thermal stresses, Ultra large scale integration",
author = "M. Aoki and H. Takato and S. Samata and M. Numano and A. Yagishita and K. Hieda and Akihiro Nitayama and F. Horiguchi",
year = "1991",
month = jan,
day = "1",
doi = "10.1109/IEDM.1991.235359",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "447--450",
booktitle = "International Electron Devices Meeting 1991, IEDM 1991",
note = "International Electron Devices Meeting, IEDM 1991 ; Conference date: 08-12-1991 Through 11-12-1991",
}