Quarter-micron selective-epitaxial-silicon refilled trench (SRT) isolation technology with substrate shield

M. Aoki, H. Takato, S. Samata, M. Numano, A. Yagishita, K. Hieda, Akihiro Nitayama, F. Horiguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution


In order to realize high-density and stress-free field isolation for future ULSIs, the authors propose a selective-epitaxial-silicon refilled trench (SRT) isolation. The SRT isolation structure consists of a thin insulator film on the trench sidewalls, a selective-epitaxial-growth (SEG) silicon layer refilling the trench, and a capping oxide covering the trench openings. By using this isolation, the number of isolation process steps can be reduced to 60% of the number for a conventional process, and the stress induced by the thermal process can be minimal. The authors have succeeded in fabricating a 0.2-μ m isolation structure and have confirmed its excellent characteristics.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780302435
Publication statusPublished - 1991 Jan 1
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 1991 Dec 81991 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


OtherInternational Electron Devices Meeting, IEDM 1991
Country/TerritoryUnited States


  • Fabrication
  • Insulation
  • Isolation technology
  • Planarization
  • Semiconductor films
  • Silicon
  • Substrates
  • Surface treatment
  • Thermal stresses
  • Ultra large scale integration

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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