Radiation induced luminescence properties of pure and Sn-doped 60ZnO.40P2O5 glass

T. Yanagida, Y. Fujimoto, H. Masai

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We have investigated the optical properties and the ionising radiation induced luminescence of xSnO.(60-x)ZnO.40P2O5 (xSZP, x=0, 2.5 and 5) glasses prepared by a conventional melt-quenching method. In optical transmittance measurements, they exhibit 80-90% transparency from UV to visible wavelengths. The photoluminescence quantum yield of the 2.5SZP glass is 95%, with microsecond order decay constants, while that of the Sn-free glass is 3%, with a fast decay time of a few nanoseconds. The peak emission wavelength in scintillation spectra under x-ray irradiation is similar to that in photoluminescence, and appears at around 400 nm. The scintillation decay times of Sn-doped and Sn-free samples under x-ray exposure are a few μs and a few ns, respectively. The thermally stimulated luminescence glow curve was evaluated. For the Sn-doped sample, glow peaks were observed at 210 and 300°C, while the Sn-free sample showed a peak at 150°C. By conducting an initial rise method for trap analysis, the trap depth was found to be 5-10 meV. Optically stimulated luminescence was also examined, and a luminescence peak appeared at around 500 nm with 630 nm stimulation. Based on these results, we propose an energy level diagram of radiation induced luminescence in these glasses.

Original languageEnglish
Pages (from-to)161-165
Number of pages5
JournalPhysics and Chemistry of Glasses: European Journal of Glass Science and Technology Part B
Issue number4
Publication statusPublished - 2016 Aug


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