Radiative properties of multicarrier bound excitons in GaAs

Todd Karin, Russell J. Barbour, Charles Santori, Yoshihisa Yamamoto, Yoshiro Hirayama, Kai Mei C. Fu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Excitons in semiconductors can have multiple lifetimes due to spin-dependent oscillator strengths and interference between different recombination pathways. In addition, strain and symmetry effects can further modify lifetimes via the removal of degeneracies. We present a convenient formalism for predicting the optical properties of k=0 excitons with an arbitrary number of charge carriers in different symmetry environments. Using this formalism, we predict three distinct lifetimes for the neutral acceptor bound exciton in GaAs, and confirm this prediction through polarization dependent and time-resolved photoluminescence experiments. We find the acceptor bound-exciton lifetimes to be To×(1,3,34), where To=(0.61±0.12)ns. Furthermore, we provide an estimate of the intralevel and interlevel exciton spin-relaxation rates.

Original languageEnglish
Article number165204
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number16
Publication statusPublished - 2015 Apr 20


Dive into the research topics of 'Radiative properties of multicarrier bound excitons in GaAs'. Together they form a unique fingerprint.

Cite this