TY - JOUR
T1 - Radio frequency field dependence of microwave assisted switching behaviors of Co/Pt Nanodots
AU - Furuta, Masaki
AU - Okamoto, Satoshi
AU - Kikuchi, Nobuaki
AU - Kitakami, Osamu
AU - Shimatsu, Takehito
N1 - Publisher Copyright:
© 2015 The Institute of Electrical Engineers of Japan.
PY - 2015/4/1
Y1 - 2015/4/1
N2 - Microwave assisted magnetization switching (MAS) has been expected as one of the prominent future ultra-high density magnetic recording technologies. In this paper, we have studied the rf field dependence of the switching behavior of Co/Pt nanodot arrays with various dot diameters. While the critical frequency increases and the minimum switching field decreases with increasing the rf field, MAS behavior critically depends on the dot size. For small dots less than 130 nm in diameter, the critical frequency and the minimum switching field exhibit linear variation with the rf field. On the other hand, for the larger dots (dot diameter ≥ 230 nm), they exhibit not only profound MAS effect but also obvious change in the behavior at a certain rf field. These changes of MAS behaviors are explained as a consequence of the change of magnetization precessional mode. On the other hand, the dispersions of MAS effect exhibit no remarkable variation on the rf field.
AB - Microwave assisted magnetization switching (MAS) has been expected as one of the prominent future ultra-high density magnetic recording technologies. In this paper, we have studied the rf field dependence of the switching behavior of Co/Pt nanodot arrays with various dot diameters. While the critical frequency increases and the minimum switching field decreases with increasing the rf field, MAS behavior critically depends on the dot size. For small dots less than 130 nm in diameter, the critical frequency and the minimum switching field exhibit linear variation with the rf field. On the other hand, for the larger dots (dot diameter ≥ 230 nm), they exhibit not only profound MAS effect but also obvious change in the behavior at a certain rf field. These changes of MAS behaviors are explained as a consequence of the change of magnetization precessional mode. On the other hand, the dispersions of MAS effect exhibit no remarkable variation on the rf field.
KW - Magnetization switching
KW - Microwave
KW - Nanodot
KW - Precessional motion
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U2 - 10.1541/ieejfms.135.229
DO - 10.1541/ieejfms.135.229
M3 - Article
AN - SCOPUS:84926192975
SN - 0385-4205
VL - 135
SP - 229
EP - 234
JO - IEEJ Transactions on Fundamentals and Materials
JF - IEEJ Transactions on Fundamentals and Materials
IS - 4
ER -