Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots

M. G. House; T. Kobayashi; B. Weber; S. J. Hile; T. F. Watson; J. Van Der Heijden; S. Rogge; M. Y. Simmons

doi:10.1038/ncomms9848

Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots

M. G. House, T. Kobayashi, B. Weber, S. J. Hile, T. F. Watson, J. Van Der Heijden, S. Rogge, M. Y. Simmons

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

Spin states of the electrons and nuclei of phosphorus donors in silicon are strong candidates for quantum information processing applications given their excellent coherence times. Designing a scalable donor-based quantum computer will require both knowledge of the relationship between device geometry and electron tunnel couplings, and a spin readout strategy that uses minimal physical space in the device. Here we use radio frequency reflectometry to measure singlet-triplet states of a few-donor Si:P double quantum dot and demonstrate that the exchange energy can be tuned by at least two orders of magnitude, from 20 μV to 8 meV. We measure dot-lead tunnel rates by analysis of the reflected signal and show that they change from 100 MHz to 22 GHz as the number of electrons on a quantum dot is increased from 1 to 4. These techniques present an approach for characterizing, operating and engineering scalable qubit devices based on donors in silicon.

Original language	English
Article number	8848
Journal	Nature communications
Volume	6
DOIs	https://doi.org/10.1038/ncomms9848
Publication status	Published - 2015 Nov 9
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Biochemistry, Genetics and Molecular Biology(all)
Physics and Astronomy(all)

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title = "Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots",

abstract = "Spin states of the electrons and nuclei of phosphorus donors in silicon are strong candidates for quantum information processing applications given their excellent coherence times. Designing a scalable donor-based quantum computer will require both knowledge of the relationship between device geometry and electron tunnel couplings, and a spin readout strategy that uses minimal physical space in the device. Here we use radio frequency reflectometry to measure singlet-triplet states of a few-donor Si:P double quantum dot and demonstrate that the exchange energy can be tuned by at least two orders of magnitude, from 20 μV to 8 meV. We measure dot-lead tunnel rates by analysis of the reflected signal and show that they change from 100 MHz to 22 GHz as the number of electrons on a quantum dot is increased from 1 to 4. These techniques present an approach for characterizing, operating and engineering scalable qubit devices based on donors in silicon.",

author = "House, {M. G.} and T. Kobayashi and B. Weber and Hile, {S. J.} and Watson, {T. F.} and {Van Der Heijden}, J. and S. Rogge and Simmons, {M. Y.}",

note = "Funding Information: This research was supported by the Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology (Project No. CE110001027) and the US Army Research Office under Contract No. W911NF-13-1-0024. M.Y.S. acknowledges an Australian Research Council Laureate Fellowship. The device was fabricated in part at the NSW node of the Australian National Fabrication Facility (ANFF).",

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doi = "10.1038/ncomms9848",

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AU - House, M. G.

AU - Kobayashi, T.

AU - Weber, B.

AU - Hile, S. J.

AU - Watson, T. F.

AU - Van Der Heijden, J.

AU - Rogge, S.

AU - Simmons, M. Y.

N1 - Funding Information: This research was supported by the Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology (Project No. CE110001027) and the US Army Research Office under Contract No. W911NF-13-1-0024. M.Y.S. acknowledges an Australian Research Council Laureate Fellowship. The device was fabricated in part at the NSW node of the Australian National Fabrication Facility (ANFF).

PY - 2015/11/9

Y1 - 2015/11/9

N2 - Spin states of the electrons and nuclei of phosphorus donors in silicon are strong candidates for quantum information processing applications given their excellent coherence times. Designing a scalable donor-based quantum computer will require both knowledge of the relationship between device geometry and electron tunnel couplings, and a spin readout strategy that uses minimal physical space in the device. Here we use radio frequency reflectometry to measure singlet-triplet states of a few-donor Si:P double quantum dot and demonstrate that the exchange energy can be tuned by at least two orders of magnitude, from 20 μV to 8 meV. We measure dot-lead tunnel rates by analysis of the reflected signal and show that they change from 100 MHz to 22 GHz as the number of electrons on a quantum dot is increased from 1 to 4. These techniques present an approach for characterizing, operating and engineering scalable qubit devices based on donors in silicon.

AB - Spin states of the electrons and nuclei of phosphorus donors in silicon are strong candidates for quantum information processing applications given their excellent coherence times. Designing a scalable donor-based quantum computer will require both knowledge of the relationship between device geometry and electron tunnel couplings, and a spin readout strategy that uses minimal physical space in the device. Here we use radio frequency reflectometry to measure singlet-triplet states of a few-donor Si:P double quantum dot and demonstrate that the exchange energy can be tuned by at least two orders of magnitude, from 20 μV to 8 meV. We measure dot-lead tunnel rates by analysis of the reflected signal and show that they change from 100 MHz to 22 GHz as the number of electrons on a quantum dot is increased from 1 to 4. These techniques present an approach for characterizing, operating and engineering scalable qubit devices based on donors in silicon.

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Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots

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