Raman-scattering characterization of InN films grown by pressurized metal organic vapor phase epitaxy

Jung Gon Kim; Yasuhito Kamei; Atsuhito Kimura; Noriyuki Hasuike; Hiroshi Harima; Kenji Kisoda; Yu Huai Liu; Takashi Matsuoka

doi:10.1002/pssb.201147452

Raman-scattering characterization of InN films grown by pressurized metal organic vapor phase epitaxy

Jung Gon Kim, Yasuhito Kamei, Atsuhito Kimura, Noriyuki Hasuike, Hiroshi Harima, Kenji Kisoda, Yu Huai Liu, Takashi Matsuoka

Materials Design Division

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Improvement of hexagonal InN film quality grown by metal-organic vapor phase epitaxy has been challenged by changing the ambient-gas pressure in 87-320kPa (~1-3atm.). The growth temperature and the source-gas supply ratio, the so-called V/III ratio, were optimized at each ambient-gas pressure to improve the film quality. Raman scattering characterization of InN phonon spectra showed great improvement in crystalline quality by increasing the pressure from 87 to 213kPa, and furthermore to 320kPa. This tendency was also confirmed by a structural characterization by X-ray diffraction.

Original language	English
Pages (from-to)	779-783
Number of pages	5
Journal	Physica Status Solidi (B) Basic Research
Volume	249
Issue number	4
DOIs	https://doi.org/10.1002/pssb.201147452
Publication status	Published - 2012 Apr

Keywords

Crystalline quality
High pressures
Indium nitride
Raman scattering

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/pssb.201147452

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abstract = "Improvement of hexagonal InN film quality grown by metal-organic vapor phase epitaxy has been challenged by changing the ambient-gas pressure in 87-320kPa (~1-3atm.). The growth temperature and the source-gas supply ratio, the so-called V/III ratio, were optimized at each ambient-gas pressure to improve the film quality. Raman scattering characterization of InN phonon spectra showed great improvement in crystalline quality by increasing the pressure from 87 to 213kPa, and furthermore to 320kPa. This tendency was also confirmed by a structural characterization by X-ray diffraction.",

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T1 - Raman-scattering characterization of InN films grown by pressurized metal organic vapor phase epitaxy

AU - Kim, Jung Gon

AU - Kamei, Yasuhito

AU - Kimura, Atsuhito

AU - Hasuike, Noriyuki

AU - Harima, Hiroshi

AU - Kisoda, Kenji

AU - Liu, Yu Huai

AU - Matsuoka, Takashi

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AB - Improvement of hexagonal InN film quality grown by metal-organic vapor phase epitaxy has been challenged by changing the ambient-gas pressure in 87-320kPa (~1-3atm.). The growth temperature and the source-gas supply ratio, the so-called V/III ratio, were optimized at each ambient-gas pressure to improve the film quality. Raman scattering characterization of InN phonon spectra showed great improvement in crystalline quality by increasing the pressure from 87 to 213kPa, and furthermore to 320kPa. This tendency was also confirmed by a structural characterization by X-ray diffraction.

KW - Crystalline quality

KW - High pressures

KW - Indium nitride

KW - Raman scattering

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Raman-scattering characterization of InN films grown by pressurized metal organic vapor phase epitaxy

Abstract

Keywords

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