Raman spectra of GaPAs-GaP heterostructure waveguides

T. Tanabe; K. Suto; T. Kimura; T. Ohtani; J. Nishizawa

doi:10.1016/j.mssp.2003.07.028

Raman spectra of GaPAs-GaP heterostructure waveguides

T. Tanabe, K. Suto, T. Kimura, T. Ohtani, J. Nishizawa

Research output: Contribution to journal › Article › peer-review

Abstract

A GaPAs waveguide with GaP cladding layers, has been fabricated in only two steps of LPE growth. One-way optical loss of the fabricated GaPAs-GaP waveguide is 12% mm^-1 (α = 1.9 cm^-1). The free carrier concentration of the GaPAs layer is 1 × 10¹⁶ cm ^-3 (α = 0.05 cm^-1). The backward spontaneous Raman spectrum from the GaPAs waveguide shows a GaP-like longitudinal optical (LO) phonon line. The LO band is intensified and shifted to a higher frequency compared to the LO phonon of GaP bulk crystal.

Original language	English
Pages (from-to)	445-447
Number of pages	3
Journal	Materials Science in Semiconductor Processing
Volume	6
Issue number	5-6
DOIs	https://doi.org/10.1016/j.mssp.2003.07.028
Publication status	Published - 2003 Oct
Externally published	Yes

Keywords

GaPAs
Optical waveguide
Phonon
Raman amplifier

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2003.07.028

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title = "Raman spectra of GaPAs-GaP heterostructure waveguides",

abstract = "A GaPAs waveguide with GaP cladding layers, has been fabricated in only two steps of LPE growth. One-way optical loss of the fabricated GaPAs-GaP waveguide is 12% mm-1 (α = 1.9 cm-1). The free carrier concentration of the GaPAs layer is 1 × 1016 cm -3 (α = 0.05 cm-1). The backward spontaneous Raman spectrum from the GaPAs waveguide shows a GaP-like longitudinal optical (LO) phonon line. The LO band is intensified and shifted to a higher frequency compared to the LO phonon of GaP bulk crystal.",

keywords = "GaPAs, Optical waveguide, Phonon, Raman amplifier",

author = "T. Tanabe and K. Suto and T. Kimura and T. Ohtani and J. Nishizawa",

year = "2003",

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doi = "10.1016/j.mssp.2003.07.028",

language = "English",

volume = "6",

pages = "445--447",

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TY - JOUR

T1 - Raman spectra of GaPAs-GaP heterostructure waveguides

AU - Tanabe, T.

AU - Suto, K.

AU - Kimura, T.

AU - Ohtani, T.

AU - Nishizawa, J.

PY - 2003/10

Y1 - 2003/10

N2 - A GaPAs waveguide with GaP cladding layers, has been fabricated in only two steps of LPE growth. One-way optical loss of the fabricated GaPAs-GaP waveguide is 12% mm-1 (α = 1.9 cm-1). The free carrier concentration of the GaPAs layer is 1 × 1016 cm -3 (α = 0.05 cm-1). The backward spontaneous Raman spectrum from the GaPAs waveguide shows a GaP-like longitudinal optical (LO) phonon line. The LO band is intensified and shifted to a higher frequency compared to the LO phonon of GaP bulk crystal.

AB - A GaPAs waveguide with GaP cladding layers, has been fabricated in only two steps of LPE growth. One-way optical loss of the fabricated GaPAs-GaP waveguide is 12% mm-1 (α = 1.9 cm-1). The free carrier concentration of the GaPAs layer is 1 × 1016 cm -3 (α = 0.05 cm-1). The backward spontaneous Raman spectrum from the GaPAs waveguide shows a GaP-like longitudinal optical (LO) phonon line. The LO band is intensified and shifted to a higher frequency compared to the LO phonon of GaP bulk crystal.

KW - GaPAs

KW - Optical waveguide

KW - Phonon

KW - Raman amplifier

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DO - 10.1016/j.mssp.2003.07.028

M3 - Article

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SN - 1369-8001

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SP - 445

EP - 447

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 5-6

ER -

Raman spectra of GaPAs-GaP heterostructure waveguides

Abstract

Keywords

ASJC Scopus subject areas

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