Random telegraph noise measurement and analysis based on arrayed test circuit toward high S/N CMOS image sensors

Rihito Kuroda; Akinobu Teramoto; Shigetoshi Sugawa

doi:10.1109/ICMTS.2016.7476172

Random telegraph noise measurement and analysis based on arrayed test circuit toward high S/N CMOS image sensors

Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Citations (Scopus)

Abstract

Using the developed array test circuit, both static and temporal electrical characteristics of over million transistors/shot were measured with the accuracy of 60 μVrms to analyze and reduce random telegraph noise (RTN) toward high S/N CMOS image sensors. Statistical evaluation results of RTN parameters such as time constants and amplitude and their behaviors toward transistor device structures and operation conditions are summarized. Application to high S/N CMOS image sensor is also described.

Original language	English
Title of host publication	2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	46-51
Number of pages	6
ISBN (Electronic)	9781467387934
DOIs	https://doi.org/10.1109/ICMTS.2016.7476172
Publication status	Published - 2016 May 20
Event	29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Yokohama, Japan Duration: 2016 Mar 28 → 2016 Mar 31

Publication series

Name	IEEE International Conference on Microelectronic Test Structures
Volume	2016-May

Other

Other	29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016
Country/Territory	Japan
City	Yokohama
Period	16/3/28 → 16/3/31

Keywords

CMOS image sensor
arrayed test circuit
random telegraph noise

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICMTS.2016.7476172

Cite this

Kuroda, R., Teramoto, A., & Sugawa, S. (2016). Random telegraph noise measurement and analysis based on arrayed test circuit toward high S/N CMOS image sensors. In 2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings (pp. 46-51). [7476172] (IEEE International Conference on Microelectronic Test Structures; Vol. 2016-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICMTS.2016.7476172

Random telegraph noise measurement and analysis based on arrayed test circuit toward high S/N CMOS image sensors. / Kuroda, Rihito; Teramoto, Akinobu; Sugawa, Shigetoshi.
2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. p. 46-51 7476172 (IEEE International Conference on Microelectronic Test Structures; Vol. 2016-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kuroda, R, Teramoto, A & Sugawa, S 2016, Random telegraph noise measurement and analysis based on arrayed test circuit toward high S/N CMOS image sensors. in 2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings., 7476172, IEEE International Conference on Microelectronic Test Structures, vol. 2016-May, Institute of Electrical and Electronics Engineers Inc., pp. 46-51, 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016, Yokohama, Japan, 16/3/28. https://doi.org/10.1109/ICMTS.2016.7476172

Kuroda R, Teramoto A, Sugawa S. Random telegraph noise measurement and analysis based on arrayed test circuit toward high S/N CMOS image sensors. In 2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc. 2016. p. 46-51. 7476172. (IEEE International Conference on Microelectronic Test Structures). doi: 10.1109/ICMTS.2016.7476172

Kuroda, Rihito ; Teramoto, Akinobu ; Sugawa, Shigetoshi. / Random telegraph noise measurement and analysis based on arrayed test circuit toward high S/N CMOS image sensors. 2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 46-51 (IEEE International Conference on Microelectronic Test Structures).

@inproceedings{816fbea634ad441e8288395054c8a730,

title = "Random telegraph noise measurement and analysis based on arrayed test circuit toward high S/N CMOS image sensors",

abstract = "Using the developed array test circuit, both static and temporal electrical characteristics of over million transistors/shot were measured with the accuracy of 60 μVrms to analyze and reduce random telegraph noise (RTN) toward high S/N CMOS image sensors. Statistical evaluation results of RTN parameters such as time constants and amplitude and their behaviors toward transistor device structures and operation conditions are summarized. Application to high S/N CMOS image sensor is also described.",

keywords = "CMOS image sensor, arrayed test circuit, random telegraph noise",

author = "Rihito Kuroda and Akinobu Teramoto and Shigetoshi Sugawa",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE. Copyright: Copyright 2016 Elsevier B.V., All rights reserved.; 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 ; Conference date: 28-03-2016 Through 31-03-2016",

year = "2016",

month = may,

day = "20",

doi = "10.1109/ICMTS.2016.7476172",

language = "English",

series = "IEEE International Conference on Microelectronic Test Structures",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "46--51",

booktitle = "2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings",

}

TY - GEN

T1 - Random telegraph noise measurement and analysis based on arrayed test circuit toward high S/N CMOS image sensors

AU - Kuroda, Rihito

AU - Teramoto, Akinobu

AU - Sugawa, Shigetoshi

PY - 2016/5/20

Y1 - 2016/5/20

N2 - Using the developed array test circuit, both static and temporal electrical characteristics of over million transistors/shot were measured with the accuracy of 60 μVrms to analyze and reduce random telegraph noise (RTN) toward high S/N CMOS image sensors. Statistical evaluation results of RTN parameters such as time constants and amplitude and their behaviors toward transistor device structures and operation conditions are summarized. Application to high S/N CMOS image sensor is also described.

AB - Using the developed array test circuit, both static and temporal electrical characteristics of over million transistors/shot were measured with the accuracy of 60 μVrms to analyze and reduce random telegraph noise (RTN) toward high S/N CMOS image sensors. Statistical evaluation results of RTN parameters such as time constants and amplitude and their behaviors toward transistor device structures and operation conditions are summarized. Application to high S/N CMOS image sensor is also described.

KW - CMOS image sensor

KW - arrayed test circuit

KW - random telegraph noise

UR - http://www.scopus.com/inward/record.url?scp=84974604996&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84974604996&partnerID=8YFLogxK

U2 - 10.1109/ICMTS.2016.7476172

DO - 10.1109/ICMTS.2016.7476172

M3 - Conference contribution

AN - SCOPUS:84974604996

T3 - IEEE International Conference on Microelectronic Test Structures

SP - 46

EP - 51

BT - 2016 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016 - Conference Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 29th IEEE International Conference on Microelectronic Test Structures, ICMTS 2016

Y2 - 28 March 2016 through 31 March 2016

ER -

Random telegraph noise measurement and analysis based on arrayed test circuit toward high S/N CMOS image sensors

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this