Rapid construction of a phase diagram of doped Mott insulators with a composition-spread approach

T. Fukumura; M. Ohtani; M. Kawasaki; Y. Okimoto; T. Kageyama; T. Koida; T. Hasegawa; Y. Tokura; H. Koinuma

doi:10.1063/1.1326847

Rapid construction of a phase diagram of doped Mott insulators with a composition-spread approach

T. Fukumura, M. Ohtani, M. Kawasaki, Y. Okimoto, T. Kageyama, T. Koida, T. Hasegawa, Y. Tokura, H. Koinuma

Research output: Contribution to journal › Article › peer-review

163 Citations (Scopus)

Abstract

We propose a method of rapid construction of a structural-magnetic-electronic phase diagram of doped Mott insulators. The composition-spread method is utilized for fabricating a film whose doping concentration varies from 0 to 1 continuously. The concurrent x-ray diffractometer that measures x-ray diffraction spectra of all the composition simultaneously, the scanning superconducting quantum interference device microscope, and the infrared optical spectroscopy are employed for characterizing the film. A demonstration is given for a colossal magnetoresistive material, La_1-xSr_xMnO₃.

Original language	English
Pages (from-to)	3426-3428
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	21
DOIs	https://doi.org/10.1063/1.1326847
Publication status	Published - 2000 Nov 20
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1326847

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abstract = "We propose a method of rapid construction of a structural-magnetic-electronic phase diagram of doped Mott insulators. The composition-spread method is utilized for fabricating a film whose doping concentration varies from 0 to 1 continuously. The concurrent x-ray diffractometer that measures x-ray diffraction spectra of all the composition simultaneously, the scanning superconducting quantum interference device microscope, and the infrared optical spectroscopy are employed for characterizing the film. A demonstration is given for a colossal magnetoresistive material, La1-xSrxMnO3.",

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AU - Fukumura, T.

AU - Ohtani, M.

AU - Kawasaki, M.

AU - Okimoto, Y.

AU - Kageyama, T.

AU - Koida, T.

AU - Hasegawa, T.

AU - Tokura, Y.

AU - Koinuma, H.

PY - 2000/11/20

Y1 - 2000/11/20

N2 - We propose a method of rapid construction of a structural-magnetic-electronic phase diagram of doped Mott insulators. The composition-spread method is utilized for fabricating a film whose doping concentration varies from 0 to 1 continuously. The concurrent x-ray diffractometer that measures x-ray diffraction spectra of all the composition simultaneously, the scanning superconducting quantum interference device microscope, and the infrared optical spectroscopy are employed for characterizing the film. A demonstration is given for a colossal magnetoresistive material, La1-xSrxMnO3.

AB - We propose a method of rapid construction of a structural-magnetic-electronic phase diagram of doped Mott insulators. The composition-spread method is utilized for fabricating a film whose doping concentration varies from 0 to 1 continuously. The concurrent x-ray diffractometer that measures x-ray diffraction spectra of all the composition simultaneously, the scanning superconducting quantum interference device microscope, and the infrared optical spectroscopy are employed for characterizing the film. A demonstration is given for a colossal magnetoresistive material, La1-xSrxMnO3.

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Rapid construction of a phase diagram of doped Mott insulators with a composition-spread approach

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