Rapid imaging of carrier density of Si using reflectance measurement in the terahertz region

Akihide Hamano; Yoshinobu Takatsu; Seigo Ohno; Hiroaki Minamide; Hiromasa Ito; Yoshiyuki Usuki

doi:10.4028/www.scientific.net/MSF.725.227

Rapid imaging of carrier density of Si using reflectance measurement in the terahertz region

Akihide Hamano, Yoshinobu Takatsu, Seigo Ohno, Hiroaki Minamide, Hiromasa Ito, Yoshiyuki Usuki

SCI - Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Rapid imaging of the carrier density of n-type silicon (Si) was carried out at the rate of 2 s per point using a terahertz wave of 4.4 THz generated from a tun able terahertz source. Reflectance of 4.4 THz as a function of carrier density was calculated using a simple Drude model. The carrier densities obtained from the terahertz imaging were 1 × 10¹⁸ cm^-3 and 3 × 10¹⁸ cm^-3, respectively.

Original language	English
Title of host publication	Defects-Recognition, Imaging and Physics in Semiconductors XIV
Publisher	Trans Tech Publications Ltd
Pages	227-230
Number of pages	4
ISBN (Print)	9783037854426
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.725.227
Publication status	Published - 2012
Event	14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14 - Miyazaki, Japan Duration: 2011 Sept 25 → 2011 Sept 29

Publication series

Name	Materials Science Forum
Volume	725
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14
Country/Territory	Japan
City	Miyazaki
Period	11/9/25 → 11/9/29

Keywords

Carrier density
Imaging
Silicon
Terahertz

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10.4028/www.scientific.net/MSF.725.227

Cite this

Hamano, A., Takatsu, Y., Ohno, S., Minamide, H., Ito, H., & Usuki, Y. (2012). Rapid imaging of carrier density of Si using reflectance measurement in the terahertz region. In Defects-Recognition, Imaging and Physics in Semiconductors XIV (pp. 227-230). (Materials Science Forum; Vol. 725). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.725.227

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title = "Rapid imaging of carrier density of Si using reflectance measurement in the terahertz region",

abstract = "Rapid imaging of the carrier density of n-type silicon (Si) was carried out at the rate of 2 s per point using a terahertz wave of 4.4 THz generated from a tun able terahertz source. Reflectance of 4.4 THz as a function of carrier density was calculated using a simple Drude model. The carrier densities obtained from the terahertz imaging were 1 × 1018 cm-3 and 3 × 1018 cm-3, respectively.",

keywords = "Carrier density, Imaging, Silicon, Terahertz",

author = "Akihide Hamano and Yoshinobu Takatsu and Seigo Ohno and Hiroaki Minamide and Hiromasa Ito and Yoshiyuki Usuki",

year = "2012",

doi = "10.4028/www.scientific.net/MSF.725.227",

language = "English",

isbn = "9783037854426",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "227--230",

booktitle = "Defects-Recognition, Imaging and Physics in Semiconductors XIV",

note = "14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14 ; Conference date: 25-09-2011 Through 29-09-2011",

}

Hamano, A, Takatsu, Y, Ohno, S, Minamide, H, Ito, H & Usuki, Y 2012, Rapid imaging of carrier density of Si using reflectance measurement in the terahertz region. in Defects-Recognition, Imaging and Physics in Semiconductors XIV. Materials Science Forum, vol. 725, Trans Tech Publications Ltd, pp. 227-230, 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14, Miyazaki, Japan, 11/9/25. https://doi.org/10.4028/www.scientific.net/MSF.725.227

Rapid imaging of carrier density of Si using reflectance measurement in the terahertz region. / Hamano, Akihide; Takatsu, Yoshinobu; Ohno, Seigo et al.
Defects-Recognition, Imaging and Physics in Semiconductors XIV. Trans Tech Publications Ltd, 2012. p. 227-230 (Materials Science Forum; Vol. 725).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Rapid imaging of carrier density of Si using reflectance measurement in the terahertz region

AU - Hamano, Akihide

AU - Takatsu, Yoshinobu

AU - Ohno, Seigo

AU - Minamide, Hiroaki

AU - Ito, Hiromasa

AU - Usuki, Yoshiyuki

PY - 2012

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N2 - Rapid imaging of the carrier density of n-type silicon (Si) was carried out at the rate of 2 s per point using a terahertz wave of 4.4 THz generated from a tun able terahertz source. Reflectance of 4.4 THz as a function of carrier density was calculated using a simple Drude model. The carrier densities obtained from the terahertz imaging were 1 × 1018 cm-3 and 3 × 1018 cm-3, respectively.

AB - Rapid imaging of the carrier density of n-type silicon (Si) was carried out at the rate of 2 s per point using a terahertz wave of 4.4 THz generated from a tun able terahertz source. Reflectance of 4.4 THz as a function of carrier density was calculated using a simple Drude model. The carrier densities obtained from the terahertz imaging were 1 × 1018 cm-3 and 3 × 1018 cm-3, respectively.

KW - Carrier density

KW - Imaging

KW - Silicon

KW - Terahertz

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BT - Defects-Recognition, Imaging and Physics in Semiconductors XIV

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Rapid imaging of carrier density of Si using reflectance measurement in the terahertz region

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