TY - GEN
T1 - Rapid terahertz imaging of carrier density of 3C-SiC
AU - Hamano, Akihide
AU - Ohno, Seigo
AU - Minamide, Hiroaki
AU - Ito, Hiromasa
AU - Usuki, Yoshiyuki
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2012
Y1 - 2012
N2 - The reflectance around the longitudinal optical (LO) phonon frequency in the terahertz region changes with the carrier density of silicon carbide (SiC), while the reflectance around the transverse optical (TO) phonon frequency remains constantly high. The relative reflectance obtained from the reflectance at the two frequencies related to the TO and LO phonon was evaluated as a function of the carrier density of SiC. Two waves around these phonon frequencies can be generated easily using a tunable terahertz source. Nondestructive imaging of the carrier density of cubic SiC (3C-SiC) at the rate of 1 s per point was carried out successfully using this tunable terahertz source.
AB - The reflectance around the longitudinal optical (LO) phonon frequency in the terahertz region changes with the carrier density of silicon carbide (SiC), while the reflectance around the transverse optical (TO) phonon frequency remains constantly high. The relative reflectance obtained from the reflectance at the two frequencies related to the TO and LO phonon was evaluated as a function of the carrier density of SiC. Two waves around these phonon frequencies can be generated easily using a tunable terahertz source. Nondestructive imaging of the carrier density of cubic SiC (3C-SiC) at the rate of 1 s per point was carried out successfully using this tunable terahertz source.
KW - Carrier density
KW - Nondestructive imaging
KW - Silicon carbide
KW - Terahertz
UR - http://www.scopus.com/inward/record.url?scp=84872470840&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84872470840&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.725.57
DO - 10.4028/www.scientific.net/MSF.725.57
M3 - Conference contribution
AN - SCOPUS:84872470840
SN - 9783037854426
T3 - Materials Science Forum
SP - 57
EP - 60
BT - Defects-Recognition, Imaging and Physics in Semiconductors XIV
PB - Trans Tech Publications Ltd
T2 - 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, DRIP-14
Y2 - 25 September 2011 through 29 September 2011
ER -