TY - JOUR
T1 - Rashba spin-orbit interaction in a MgxZn1-xO/ZnO two-dimensional electron gas studied by electrically detected electron spin resonance
AU - Kozuka, Y.
AU - Teraoka, S.
AU - Falson, J.
AU - Oiwa, A.
AU - Tsukazaki, A.
AU - Tarucha, S.
AU - Kawasaki, M.
PY - 2013/5/7
Y1 - 2013/5/7
N2 - We report the experimental determination of Rashba spin-orbit interaction (SOI) strength in two-dimensional electrons in a MgZnO/ZnO heterostructure using electrically detected electron spin resonance. The Rashba parameter is determined to be 7.0×10-14 eV m, which is the second smallest value among prevalent semiconductor heterostructures, following Si/SiGe. A long transverse spin relaxation time was derived to show a maximum value of 27 ns, owing to weak SOI. Our study demonstrates that the ZnO heterostructure is a promising candidate for spintronic devices utilizing long spin coherence.
AB - We report the experimental determination of Rashba spin-orbit interaction (SOI) strength in two-dimensional electrons in a MgZnO/ZnO heterostructure using electrically detected electron spin resonance. The Rashba parameter is determined to be 7.0×10-14 eV m, which is the second smallest value among prevalent semiconductor heterostructures, following Si/SiGe. A long transverse spin relaxation time was derived to show a maximum value of 27 ns, owing to weak SOI. Our study demonstrates that the ZnO heterostructure is a promising candidate for spintronic devices utilizing long spin coherence.
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U2 - 10.1103/PhysRevB.87.205411
DO - 10.1103/PhysRevB.87.205411
M3 - Article
AN - SCOPUS:84877896000
SN - 1098-0121
VL - 87
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 20
M1 - 205411
ER -