Abstract
The values of the zero-field spin-splitting energy Δ0 in InAlAs/InGaAs/InAlAs heterostructures are investigated using anti-weak-localization analysis. The obtained values for Δ0 are compared with values that were theoretically predicted assuming Rashba spin-orbit coupling (denoted by ΔR). The good agreement between Δ0 and ΔR and their dependence on quantum well asymmetry suggest that our approach provides a useful tool for designing future spintronics devices using Rashba spin-orbit coupling.
Original language | English |
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Pages (from-to) | 542-546 |
Number of pages | 5 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 13 |
Issue number | 2-4 |
DOIs | |
Publication status | Published - 2002 Mar |
Externally published | Yes |
Keywords
- Anti-weak-localization
- InAlAs
- InGaAs
- Rashba spin-orbit coupling
- Spintronics
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics