RC delay reduction of 0.18 μm CMOS technology using low dielectric constant fluorinated amorphous carbon

Y. Matsubara; K. Kishimoto; K. Endo; M. Iguchi; T. Tatsumi; H. Gomi; T. Horiuchi; E. Tzou; M. Xi; L. Y. Cheng; D. Tribula; E. Moghadam

RC delay reduction of 0.18 μm CMOS technology using low dielectric constant fluorinated amorphous carbon

Y. Matsubara, K. Kishimoto, K. Endo, M. Iguchi, T. Tatsumi, H. Gomi, T. Horiuchi, E. Tzou, M. Xi, L. Y. Cheng, D. Tribula, E. Moghadam

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

NEC Corporation

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

A low-k fluorinated amorphous carbon (a-C:F: dielectric constant 2.5) film as inter-metal dielectric (IMD) has been successfully integrated in 0.18-μm CMOS technology. The RC delay of a ring oscillator with loaded wiring (length: 10 mm) is reduced by 22% using an a-C:F IMD compared with that using a SiO₂ IMD. The thermal stability problems from integrating a-C:F IMD with a W plug (deposition temperature: 370 °C, film stress: 1.5×10¹⁰dyne/cm²) can be overcome using post a-C:F deposition anneal. This leads to less a-C:F outgassing at temperatures up to 375 °C.

Original language	English
Pages (from-to)	841-843
Number of pages	3
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 1998
Event	Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 1998 Dec 6 → 1998 Dec 9

Cite this

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title = "RC delay reduction of 0.18 μm CMOS technology using low dielectric constant fluorinated amorphous carbon",

abstract = "A low-k fluorinated amorphous carbon (a-C:F: dielectric constant 2.5) film as inter-metal dielectric (IMD) has been successfully integrated in 0.18-μm CMOS technology. The RC delay of a ring oscillator with loaded wiring (length: 10 mm) is reduced by 22% using an a-C:F IMD compared with that using a SiO2 IMD. The thermal stability problems from integrating a-C:F IMD with a W plug (deposition temperature: 370 °C, film stress: 1.5×1010dyne/cm2) can be overcome using post a-C:F deposition anneal. This leads to less a-C:F outgassing at temperatures up to 375 °C.",

author = "Y. Matsubara and K. Kishimoto and K. Endo and M. Iguchi and T. Tatsumi and H. Gomi and T. Horiuchi and E. Tzou and M. Xi and Cheng, {L. Y.} and D. Tribula and E. Moghadam",

year = "1998",

language = "English",

pages = "841--843",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 IEEE International Electron Devices Meeting ; Conference date: 06-12-1998 Through 09-12-1998",

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TY - JOUR

T1 - RC delay reduction of 0.18 μm CMOS technology using low dielectric constant fluorinated amorphous carbon

AU - Matsubara, Y.

AU - Kishimoto, K.

AU - Endo, K.

AU - Iguchi, M.

AU - Tatsumi, T.

AU - Gomi, H.

AU - Horiuchi, T.

AU - Tzou, E.

AU - Xi, M.

AU - Cheng, L. Y.

AU - Tribula, D.

AU - Moghadam, E.

PY - 1998

Y1 - 1998

N2 - A low-k fluorinated amorphous carbon (a-C:F: dielectric constant 2.5) film as inter-metal dielectric (IMD) has been successfully integrated in 0.18-μm CMOS technology. The RC delay of a ring oscillator with loaded wiring (length: 10 mm) is reduced by 22% using an a-C:F IMD compared with that using a SiO2 IMD. The thermal stability problems from integrating a-C:F IMD with a W plug (deposition temperature: 370 °C, film stress: 1.5×1010dyne/cm2) can be overcome using post a-C:F deposition anneal. This leads to less a-C:F outgassing at temperatures up to 375 °C.

AB - A low-k fluorinated amorphous carbon (a-C:F: dielectric constant 2.5) film as inter-metal dielectric (IMD) has been successfully integrated in 0.18-μm CMOS technology. The RC delay of a ring oscillator with loaded wiring (length: 10 mm) is reduced by 22% using an a-C:F IMD compared with that using a SiO2 IMD. The thermal stability problems from integrating a-C:F IMD with a W plug (deposition temperature: 370 °C, film stress: 1.5×1010dyne/cm2) can be overcome using post a-C:F deposition anneal. This leads to less a-C:F outgassing at temperatures up to 375 °C.

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M3 - Conference article

AN - SCOPUS:17944386756

SN - 0163-1918

SP - 841

EP - 843

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1998 IEEE International Electron Devices Meeting

Y2 - 6 December 1998 through 9 December 1998

ER -

RC delay reduction of 0.18 μm CMOS technology using low dielectric constant fluorinated amorphous carbon

Abstract

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