A low-k fluorinated amorphous carbon (a-C:F: dielectric constant 2.5) film as inter-metal dielectric (IMD) has been successfully integrated in 0.18-μm CMOS technology. The RC delay of a ring oscillator with loaded wiring (length: 10 mm) is reduced by 22% using an a-C:F IMD compared with that using a SiO2 IMD. The thermal stability problems from integrating a-C:F IMD with a W plug (deposition temperature: 370 °C, film stress: 1.5×1010dyne/cm2) can be overcome using post a-C:F deposition anneal. This leads to less a-C:F outgassing at temperatures up to 375 °C.
|Number of pages||3|
|Journal||Technical Digest - International Electron Devices Meeting|
|Publication status||Published - 1998|
|Event||Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
Duration: 1998 Dec 6 → 1998 Dec 9