Re-entrant spin-glass behaviour in CeAu2Si2

D. X. Li, T. Yamamura, S. Nimori, Y. Shiokawa

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We present the results of ac and dc susceptibility, magnetic relaxation, specific heat and electrical resistivity measurements on a well-annealed tetragonal ThCr2Si2-type compound CeAu2Si2. These data provide clear evidence for the formation of spin glass state in this system at about Tf ∼ 2.2 K much lower than its Néel temperature TN = 10 K. The mechanism of the observed re-entrant spin-glass behaviour in CeAu2Si2 is discussed by comparing the present results with those reported for the analogue compounds URh2Ge2 and PrAu2Si2.

Original languageEnglish
Pages (from-to)461-463
Number of pages3
JournalJournal of Alloys and Compounds
Issue number1-2
Publication statusPublished - 2008 Feb 28


  • CeAuSi
  • Magnetic susceptibility
  • Re-entrant spin glass
  • Specific heat


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