Re-entrant spin-glass behaviour in CeAu2Si2

D. X. Li; T. Yamamura; S. Nimori; Y. Shiokawa

doi:10.1016/j.jallcom.2007.04.109

Re-entrant spin-glass behaviour in CeAu₂Si₂

D. X. Li, T. Yamamura, S. Nimori, Y. Shiokawa

IMR - Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We present the results of ac and dc susceptibility, magnetic relaxation, specific heat and electrical resistivity measurements on a well-annealed tetragonal ThCr₂Si₂-type compound CeAu₂Si₂. These data provide clear evidence for the formation of spin glass state in this system at about T_f ∼ 2.2 K much lower than its Néel temperature T_N = 10 K. The mechanism of the observed re-entrant spin-glass behaviour in CeAu₂Si₂ is discussed by comparing the present results with those reported for the analogue compounds URh₂Ge₂ and PrAu₂Si₂.

Original language	English
Pages (from-to)	461-463
Number of pages	3
Journal	Journal of Alloys and Compounds
Volume	451
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jallcom.2007.04.109
Publication status	Published - 2008 Feb 28

Keywords

CeAuSi
Magnetic susceptibility
Re-entrant spin glass
Specific heat

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10.1016/j.jallcom.2007.04.109

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abstract = "We present the results of ac and dc susceptibility, magnetic relaxation, specific heat and electrical resistivity measurements on a well-annealed tetragonal ThCr2Si2-type compound CeAu2Si2. These data provide clear evidence for the formation of spin glass state in this system at about Tf ∼ 2.2 K much lower than its N{\'e}el temperature TN = 10 K. The mechanism of the observed re-entrant spin-glass behaviour in CeAu2Si2 is discussed by comparing the present results with those reported for the analogue compounds URh2Ge2 and PrAu2Si2.",

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author = "Li, {D. X.} and T. Yamamura and S. Nimori and Y. Shiokawa",

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T1 - Re-entrant spin-glass behaviour in CeAu2Si2

AU - Li, D. X.

AU - Yamamura, T.

AU - Nimori, S.

AU - Shiokawa, Y.

PY - 2008/2/28

Y1 - 2008/2/28

N2 - We present the results of ac and dc susceptibility, magnetic relaxation, specific heat and electrical resistivity measurements on a well-annealed tetragonal ThCr2Si2-type compound CeAu2Si2. These data provide clear evidence for the formation of spin glass state in this system at about Tf ∼ 2.2 K much lower than its Néel temperature TN = 10 K. The mechanism of the observed re-entrant spin-glass behaviour in CeAu2Si2 is discussed by comparing the present results with those reported for the analogue compounds URh2Ge2 and PrAu2Si2.

AB - We present the results of ac and dc susceptibility, magnetic relaxation, specific heat and electrical resistivity measurements on a well-annealed tetragonal ThCr2Si2-type compound CeAu2Si2. These data provide clear evidence for the formation of spin glass state in this system at about Tf ∼ 2.2 K much lower than its Néel temperature TN = 10 K. The mechanism of the observed re-entrant spin-glass behaviour in CeAu2Si2 is discussed by comparing the present results with those reported for the analogue compounds URh2Ge2 and PrAu2Si2.

KW - CeAuSi

KW - Magnetic susceptibility

KW - Re-entrant spin glass

KW - Specific heat

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JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 1-2

ER -

Re-entrant spin-glass behaviour in CeAu₂Si₂

Abstract

Keywords

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