Reaction and regrowth control of CeO2 on Si(111) surface for the silicon-on-insulator structure

T. Chikyow; S. M. Bedair; L. Tye; N. A. El-Masry

doi:10.1063/1.113011

Reaction and regrowth control of CeO₂ on Si(111) surface for the silicon-on-insulator structure

T. Chikyow, S. M. Bedair, L. Tye, N. A. El-Masry

Research output: Contribution to journal › Article › peer-review

106 Citations (Scopus)

Abstract

The interface structure of CeO₂/Si(111) grown by laser ablation in ultrahigh vacuum was investigated by, reflection high-energy electron diffraction (RHEED), high resolution transmission electron microscopy (HRTEM), and Auger electron spectroscopy (AES). The deposited film was single-crystalline CeO₂. However, during the deposition, a reaction between CeO ₂ and Si occurred at the interface, that resulted in the formation of an oxygen deficient amorphous CeO_2-x and SiO₂ layer. Post annealing in oxygen atmosphere caused the regrowth of crystalline CeO ₂ from CeO_2-x and increased of the SiO₂ thickness. The modified structure of CeO₂/SiO₂/Si is expected to be useful as a silicon-on-insulator structure since it maintains the desirable SiO₂/Si interface followed by a single-crystal insulating film lattice-matched to Si.

Original language	English
Pages (from-to)	1030-1032
Number of pages	3
Journal	Applied Physics Letters
Volume	65
Issue number	8
DOIs	https://doi.org/10.1063/1.113011
Publication status	Published - 1994
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.113011

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title = "Reaction and regrowth control of CeO2 on Si(111) surface for the silicon-on-insulator structure",

abstract = "The interface structure of CeO2/Si(111) grown by laser ablation in ultrahigh vacuum was investigated by, reflection high-energy electron diffraction (RHEED), high resolution transmission electron microscopy (HRTEM), and Auger electron spectroscopy (AES). The deposited film was single-crystalline CeO2. However, during the deposition, a reaction between CeO 2 and Si occurred at the interface, that resulted in the formation of an oxygen deficient amorphous CeO2-x and SiO2 layer. Post annealing in oxygen atmosphere caused the regrowth of crystalline CeO 2 from CeO2-x and increased of the SiO2 thickness. The modified structure of CeO2/SiO2/Si is expected to be useful as a silicon-on-insulator structure since it maintains the desirable SiO2/Si interface followed by a single-crystal insulating film lattice-matched to Si.",

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T1 - Reaction and regrowth control of CeO2 on Si(111) surface for the silicon-on-insulator structure

AU - Chikyow, T.

AU - Bedair, S. M.

AU - Tye, L.

AU - El-Masry, N. A.

PY - 1994

Y1 - 1994

N2 - The interface structure of CeO2/Si(111) grown by laser ablation in ultrahigh vacuum was investigated by, reflection high-energy electron diffraction (RHEED), high resolution transmission electron microscopy (HRTEM), and Auger electron spectroscopy (AES). The deposited film was single-crystalline CeO2. However, during the deposition, a reaction between CeO 2 and Si occurred at the interface, that resulted in the formation of an oxygen deficient amorphous CeO2-x and SiO2 layer. Post annealing in oxygen atmosphere caused the regrowth of crystalline CeO 2 from CeO2-x and increased of the SiO2 thickness. The modified structure of CeO2/SiO2/Si is expected to be useful as a silicon-on-insulator structure since it maintains the desirable SiO2/Si interface followed by a single-crystal insulating film lattice-matched to Si.

AB - The interface structure of CeO2/Si(111) grown by laser ablation in ultrahigh vacuum was investigated by, reflection high-energy electron diffraction (RHEED), high resolution transmission electron microscopy (HRTEM), and Auger electron spectroscopy (AES). The deposited film was single-crystalline CeO2. However, during the deposition, a reaction between CeO 2 and Si occurred at the interface, that resulted in the formation of an oxygen deficient amorphous CeO2-x and SiO2 layer. Post annealing in oxygen atmosphere caused the regrowth of crystalline CeO 2 from CeO2-x and increased of the SiO2 thickness. The modified structure of CeO2/SiO2/Si is expected to be useful as a silicon-on-insulator structure since it maintains the desirable SiO2/Si interface followed by a single-crystal insulating film lattice-matched to Si.

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Reaction and regrowth control of CeO₂ on Si(111) surface for the silicon-on-insulator structure

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