Reaction and stability of metal/silicide interfaces: Ti/MoSi2 (001)

J. P. Sullivan; Toshiyuki Hirano; T. Komeda; H. M. Meyer; B. M. Trafas; G. D. Waddill; J. H. Weaver

doi:10.1063/1.103308

Reaction and stability of metal/silicide interfaces: Ti/MoSi₂ (001)

J. P. Sullivan, Toshiyuki Hirano, T. Komeda, H. M. Meyer, B. M. Trafas, G. D. Waddill, J. H. Weaver

IMRAM - Division of Measurements

University of Minnesota Twin Cities

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Metal/single-crystal-silicide interface evolution has been examined for Ti/MoSi₂ (001) using high-resolution synchrotron radiation and x-ray photoemission. Reaction between Ti and Si was observed for temperatures 300≤T≤873 K. At 300 K, it was limited to Ti interaction with the single Si layer terminating the cleaved MoSi₂ (001) surface. Analysis of the Si 2p core level line shape showed two different interfacial reaction products with bonding characteristics of TiSi and a disordered solution of Si in Ti. Interfacial development was dominated by Si outdiffusion at higher temperatures with Si enrichment of the overlayer but not conversion to a silicide.

Original language	English
Pages (from-to)	671-673
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	7
DOIs	https://doi.org/10.1063/1.103308
Publication status	Published - 1990

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abstract = "Metal/single-crystal-silicide interface evolution has been examined for Ti/MoSi2 (001) using high-resolution synchrotron radiation and x-ray photoemission. Reaction between Ti and Si was observed for temperatures 300≤T≤873 K. At 300 K, it was limited to Ti interaction with the single Si layer terminating the cleaved MoSi2 (001) surface. Analysis of the Si 2p core level line shape showed two different interfacial reaction products with bonding characteristics of TiSi and a disordered solution of Si in Ti. Interfacial development was dominated by Si outdiffusion at higher temperatures with Si enrichment of the overlayer but not conversion to a silicide.",

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T2 - Ti/MoSi2 (001)

AU - Sullivan, J. P.

AU - Hirano, Toshiyuki

AU - Komeda, T.

AU - Meyer, H. M.

AU - Trafas, B. M.

AU - Waddill, G. D.

AU - Weaver, J. H.

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AB - Metal/single-crystal-silicide interface evolution has been examined for Ti/MoSi2 (001) using high-resolution synchrotron radiation and x-ray photoemission. Reaction between Ti and Si was observed for temperatures 300≤T≤873 K. At 300 K, it was limited to Ti interaction with the single Si layer terminating the cleaved MoSi2 (001) surface. Analysis of the Si 2p core level line shape showed two different interfacial reaction products with bonding characteristics of TiSi and a disordered solution of Si in Ti. Interfacial development was dominated by Si outdiffusion at higher temperatures with Si enrichment of the overlayer but not conversion to a silicide.

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Reaction and stability of metal/silicide interfaces: Ti/MoSi₂ (001)

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