TY - JOUR
T1 - Reaction of a Si (100) surface with a hot C2H4 beam
AU - Kusunoki, I.
AU - Igari, Y.
AU - Ishidzuka, S.
AU - Mine, T.
AU - Takami, T.
AU - Takaoka, T.
N1 - Funding Information:
This work was financially supported in part by grants in aid for scientific research from the Ministry of Education, Science and Culture of Japan and by CREST of the Japan Science and Technology Corporation.
PY - 1999/8/2
Y1 - 1999/8/2
N2 - A clean Si(100) surface at 670°C in ultrahigh vacuum was irradiated with a C2H4 molecular beam produced from a nozzle at 900°C. The reaction products on the surface were investigated using X-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and scanning electron microscopy. The central area of the surface irradiated with the beam was covered with a mixture of graphitic film and SiC grains. At the fringe of the central area, however, the SiC grains were the dominant products, which were epitaxially grown on the Si(100) surface. The density of the SiC grains decreased with the distance from the fringe. Compared with the results using the molecular beam produced from the nozzle at room temperature, it is concluded that the dissociation rate of the hot C2H4 molecules is higher than that of the cold molecules, resulting in a carbon film. The growth mechanisms of the graphitic and SiC products are discussed.
AB - A clean Si(100) surface at 670°C in ultrahigh vacuum was irradiated with a C2H4 molecular beam produced from a nozzle at 900°C. The reaction products on the surface were investigated using X-ray photoelectron spectroscopy, reflection high-energy electron diffraction, and scanning electron microscopy. The central area of the surface irradiated with the beam was covered with a mixture of graphitic film and SiC grains. At the fringe of the central area, however, the SiC grains were the dominant products, which were epitaxially grown on the Si(100) surface. The density of the SiC grains decreased with the distance from the fringe. Compared with the results using the molecular beam produced from the nozzle at room temperature, it is concluded that the dissociation rate of the hot C2H4 molecules is higher than that of the cold molecules, resulting in a carbon film. The growth mechanisms of the graphitic and SiC products are discussed.
KW - Carbonization
KW - Molecular beam
KW - Molecule-solid reactions
KW - Silicon
KW - Silicon carbide
KW - X-ray photoelectron spectroscopy
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U2 - 10.1016/S0039-6028(99)00057-6
DO - 10.1016/S0039-6028(99)00057-6
M3 - Conference article
AN - SCOPUS:0033318118
SN - 0039-6028
VL - 433-435
SP - 167
EP - 171
JO - Surface Science
JF - Surface Science
T2 - Proceedings of the 1998 14th International Vacuum Congress(ICV-14), 10th Conference on Solid Surfaces(ICSS-10), 5th Conference on Nanometre-scale Science and Technology(NANO-5), 10th International Conference on Quantitative Surface Analysis(QSA-10)
Y2 - 31 August 1998 through 4 September 1998
ER -