Reactive fast atom beam etching of a wide-gap semiconductor GaN is described. The etching depth of GaN films on (011̄2)-oriented sapphire is proportional to the etching time. The etching rate using Cl2 is 0.10-0.12 μm/min. in the substrate temperature range of 80-150°C. This is smaller than the rate for GaAs (100), and over ten times higher than for sapphire substrate.
|Number of pages||4|
|Publication status||Published - 1991 Jun 1|
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