Reactive fast atom beam etching of a wide-gap semiconductor GaN

Hidenao Tanaka; Fusao Shimokawa; Toru Sasaki; Takashi Matsuoka

Reactive fast atom beam etching of a wide-gap semiconductor GaN

Hidenao Tanaka, Fusao Shimokawa, Toru Sasaki, Takashi Matsuoka

Research output: Contribution to journal › Article › peer-review

Abstract

Reactive fast atom beam etching of a wide-gap semiconductor GaN is described. The etching depth of GaN films on (011̄2)-oriented sapphire is proportional to the etching time. The etching rate using Cl₂ is 0.10-0.12 μm/min. in the substrate temperature range of 80-150°C. This is smaller than the rate for GaAs (100), and over ten times higher than for sapphire substrate.

Original language	English
Pages (from-to)	150-153
Number of pages	4
Journal	Optoelectronics Tokyo
Volume	6
Issue number	1
Publication status	Published - 1991 Jun 1
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)

Cite this

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abstract = "Reactive fast atom beam etching of a wide-gap semiconductor GaN is described. The etching depth of GaN films on (01{\=1}2)-oriented sapphire is proportional to the etching time. The etching rate using Cl2 is 0.10-0.12 μm/min. in the substrate temperature range of 80-150°C. This is smaller than the rate for GaAs (100), and over ten times higher than for sapphire substrate.",

author = "Hidenao Tanaka and Fusao Shimokawa and Toru Sasaki and Takashi Matsuoka",

year = "1991",

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AU - Tanaka, Hidenao

AU - Shimokawa, Fusao

AU - Sasaki, Toru

AU - Matsuoka, Takashi

PY - 1991/6/1

Y1 - 1991/6/1

N2 - Reactive fast atom beam etching of a wide-gap semiconductor GaN is described. The etching depth of GaN films on (011̄2)-oriented sapphire is proportional to the etching time. The etching rate using Cl2 is 0.10-0.12 μm/min. in the substrate temperature range of 80-150°C. This is smaller than the rate for GaAs (100), and over ten times higher than for sapphire substrate.

AB - Reactive fast atom beam etching of a wide-gap semiconductor GaN is described. The etching depth of GaN films on (011̄2)-oriented sapphire is proportional to the etching time. The etching rate using Cl2 is 0.10-0.12 μm/min. in the substrate temperature range of 80-150°C. This is smaller than the rate for GaAs (100), and over ten times higher than for sapphire substrate.

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Reactive fast atom beam etching of a wide-gap semiconductor GaN

Abstract

ASJC Scopus subject areas

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