Real information storage using ferroelectrics with a density of 1 TBIT/INCH2

K. Tanaka; Yoshiomi Hiranaga; Yasuo Cho

doi:10.1080/00150190600889080

Real information storage using ferroelectrics with a density of 1 TBIT/INCH²

K. Tanaka, Yoshiomi Hiranaga, Yasuo Cho

Information Devices Division

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

Real information data bits were written onto a ferroelectric medium in the form of the polarization direction of nano-domains. Local domain switching was carried out by applying a voltage pulse. Pulse voltage value was varied based on the polarization directions in the immediate environment to keep the bit size constant. As a result, writing and storing of real information data was demonstrated at a density of 1 Tbit/inch² and a bit error rate as low as 1.8 10^-2.

Original language	English
Pages (from-to)	99-105
Number of pages	7
Journal	Ferroelectrics
Volume	340
Issue number	1 PART 1
DOIs	https://doi.org/10.1080/00150190600889080
Publication status	Published - 2006 Dec 1
Event	International Symposium on Micro- and Nano-Scale Domain Structuring in Ferroelectrics, ISDS'05 - Ekaterinburg, Russian Federation Duration: 2005 Nov 15 → 2005 Nov 19

Keywords

Bit error rate
Ferroelectric data storage
LiTaO
Real information
Scanning nonlinear dielectric microscope

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1080/00150190600889080

Cite this

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abstract = "Real information data bits were written onto a ferroelectric medium in the form of the polarization direction of nano-domains. Local domain switching was carried out by applying a voltage pulse. Pulse voltage value was varied based on the polarization directions in the immediate environment to keep the bit size constant. As a result, writing and storing of real information data was demonstrated at a density of 1 Tbit/inch2 and a bit error rate as low as 1.8 10-2.",

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N2 - Real information data bits were written onto a ferroelectric medium in the form of the polarization direction of nano-domains. Local domain switching was carried out by applying a voltage pulse. Pulse voltage value was varied based on the polarization directions in the immediate environment to keep the bit size constant. As a result, writing and storing of real information data was demonstrated at a density of 1 Tbit/inch2 and a bit error rate as low as 1.8 10-2.

AB - Real information data bits were written onto a ferroelectric medium in the form of the polarization direction of nano-domains. Local domain switching was carried out by applying a voltage pulse. Pulse voltage value was varied based on the polarization directions in the immediate environment to keep the bit size constant. As a result, writing and storing of real information data was demonstrated at a density of 1 Tbit/inch2 and a bit error rate as low as 1.8 10-2.

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KW - Scanning nonlinear dielectric microscope

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