Real-time monitoring of the growth and decomposition of SiO2 layers on Si(001) by a combined method of RHEED and AES

Yuji Takakuwa, Fumiaki Ishida

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


The growth and decomposition of SiO2 layers on a Si(001) surface were investigated by a real-time monitoring method of Auger electron spectroscopy combined with reflection high energy electron diffraction (RHEED-AES). Using the RHEED-AES method, the SiO2 coverage and SiO2/Si interface roughness were observed simultaneously in addition to the surface structure and morphology. The time evolution of O KLL Auger electron intensity at an O2 pressure of 2×10-7 Torr shows that passive oxidation (SiO2 growth) is divided into two regions of Langmuir-type adsorption and two-dimensional island growth at about 630 °C, and that passive oxidation changes to active oxidation (etching) at about 750 °C. In the two-dimensional island growth region of 630-750 °C, RHEED spots of Si bulk diffraction appear, indicating that the SiO2/Si interface is roughened to form protrusions under SiO2 islands. During SiO2 decomposition in vacuum, the interface is further roughened, resulting in a formation of depressions. Based on the correlation between the time evolutions of SiO2 coverage and interface roughness, a surface reaction model of Si thermal oxidation is discussed.

Original languageEnglish
Pages (from-to)401-407
Number of pages7
JournalJournal of Electron Spectroscopy and Related Phenomena
Publication statusPublished - 2001 Mar
Event8th International Conference on Electronic Spectroscopy and Structure (ICESS-8) - Berkeley, CA, USA
Duration: 2000 Aug 82000 Aug 12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry


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