Real-time monitoring of the growth and decomposition of SiO2 layers on Si(001) by a combined method of RHEED and AES

Yuji Takakuwa; Fumiaki Ishida

doi:10.1016/S0368-2048(00)00234-6

Real-time monitoring of the growth and decomposition of SiO₂ layers on Si(001) by a combined method of RHEED and AES

Yuji Takakuwa, Fumiaki Ishida

Micro System Integration Center (μSIC)

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

The growth and decomposition of SiO₂ layers on a Si(001) surface were investigated by a real-time monitoring method of Auger electron spectroscopy combined with reflection high energy electron diffraction (RHEED-AES). Using the RHEED-AES method, the SiO₂ coverage and SiO₂/Si interface roughness were observed simultaneously in addition to the surface structure and morphology. The time evolution of O KLL Auger electron intensity at an O₂ pressure of 2×10^-7 Torr shows that passive oxidation (SiO₂ growth) is divided into two regions of Langmuir-type adsorption and two-dimensional island growth at about 630 °C, and that passive oxidation changes to active oxidation (etching) at about 750 °C. In the two-dimensional island growth region of 630-750 °C, RHEED spots of Si bulk diffraction appear, indicating that the SiO₂/Si interface is roughened to form protrusions under SiO₂ islands. During SiO₂ decomposition in vacuum, the interface is further roughened, resulting in a formation of depressions. Based on the correlation between the time evolutions of SiO₂ coverage and interface roughness, a surface reaction model of Si thermal oxidation is discussed.

Original language	English
Pages (from-to)	401-407
Number of pages	7
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	114-116
DOIs	https://doi.org/10.1016/S0368-2048(00)00234-6
Publication status	Published - 2001 Mar
Event	8th International Conference on Electronic Spectroscopy and Structure (ICESS-8) - Berkeley, CA, USA Duration: 2000 Aug 8 → 2000 Aug 12

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Radiation
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Spectroscopy
Physical and Theoretical Chemistry

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10.1016/S0368-2048(00)00234-6

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@article{0489ac11f87142a5b6e2f123ca9884f5,

title = "Real-time monitoring of the growth and decomposition of SiO2 layers on Si(001) by a combined method of RHEED and AES",

abstract = "The growth and decomposition of SiO2 layers on a Si(001) surface were investigated by a real-time monitoring method of Auger electron spectroscopy combined with reflection high energy electron diffraction (RHEED-AES). Using the RHEED-AES method, the SiO2 coverage and SiO2/Si interface roughness were observed simultaneously in addition to the surface structure and morphology. The time evolution of O KLL Auger electron intensity at an O2 pressure of 2×10-7 Torr shows that passive oxidation (SiO2 growth) is divided into two regions of Langmuir-type adsorption and two-dimensional island growth at about 630 °C, and that passive oxidation changes to active oxidation (etching) at about 750 °C. In the two-dimensional island growth region of 630-750 °C, RHEED spots of Si bulk diffraction appear, indicating that the SiO2/Si interface is roughened to form protrusions under SiO2 islands. During SiO2 decomposition in vacuum, the interface is further roughened, resulting in a formation of depressions. Based on the correlation between the time evolutions of SiO2 coverage and interface roughness, a surface reaction model of Si thermal oxidation is discussed.",

author = "Yuji Takakuwa and Fumiaki Ishida",

note = "Funding Information: This study was partly supported by the Grant-in-Aid for Scientific Research (12560026) of the Ministry of Education, Science, Sports and Culture of Japan.; 8th International Conference on Electronic Spectroscopy and Structure (ICESS-8) ; Conference date: 08-08-2000 Through 12-08-2000",

year = "2001",

month = mar,

doi = "10.1016/S0368-2048(00)00234-6",

language = "English",

volume = "114-116",

pages = "401--407",

journal = "Journal of Electron Spectroscopy and Related Phenomena",

issn = "0368-2048",

publisher = "Elsevier",

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TY - JOUR

T1 - Real-time monitoring of the growth and decomposition of SiO2 layers on Si(001) by a combined method of RHEED and AES

AU - Takakuwa, Yuji

AU - Ishida, Fumiaki

N1 - Funding Information: This study was partly supported by the Grant-in-Aid for Scientific Research (12560026) of the Ministry of Education, Science, Sports and Culture of Japan.

PY - 2001/3

Y1 - 2001/3

N2 - The growth and decomposition of SiO2 layers on a Si(001) surface were investigated by a real-time monitoring method of Auger electron spectroscopy combined with reflection high energy electron diffraction (RHEED-AES). Using the RHEED-AES method, the SiO2 coverage and SiO2/Si interface roughness were observed simultaneously in addition to the surface structure and morphology. The time evolution of O KLL Auger electron intensity at an O2 pressure of 2×10-7 Torr shows that passive oxidation (SiO2 growth) is divided into two regions of Langmuir-type adsorption and two-dimensional island growth at about 630 °C, and that passive oxidation changes to active oxidation (etching) at about 750 °C. In the two-dimensional island growth region of 630-750 °C, RHEED spots of Si bulk diffraction appear, indicating that the SiO2/Si interface is roughened to form protrusions under SiO2 islands. During SiO2 decomposition in vacuum, the interface is further roughened, resulting in a formation of depressions. Based on the correlation between the time evolutions of SiO2 coverage and interface roughness, a surface reaction model of Si thermal oxidation is discussed.

AB - The growth and decomposition of SiO2 layers on a Si(001) surface were investigated by a real-time monitoring method of Auger electron spectroscopy combined with reflection high energy electron diffraction (RHEED-AES). Using the RHEED-AES method, the SiO2 coverage and SiO2/Si interface roughness were observed simultaneously in addition to the surface structure and morphology. The time evolution of O KLL Auger electron intensity at an O2 pressure of 2×10-7 Torr shows that passive oxidation (SiO2 growth) is divided into two regions of Langmuir-type adsorption and two-dimensional island growth at about 630 °C, and that passive oxidation changes to active oxidation (etching) at about 750 °C. In the two-dimensional island growth region of 630-750 °C, RHEED spots of Si bulk diffraction appear, indicating that the SiO2/Si interface is roughened to form protrusions under SiO2 islands. During SiO2 decomposition in vacuum, the interface is further roughened, resulting in a formation of depressions. Based on the correlation between the time evolutions of SiO2 coverage and interface roughness, a surface reaction model of Si thermal oxidation is discussed.

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U2 - 10.1016/S0368-2048(00)00234-6

DO - 10.1016/S0368-2048(00)00234-6

M3 - Conference article

AN - SCOPUS:0035277743

SN - 0368-2048

VL - 114-116

SP - 401

EP - 407

JO - Journal of Electron Spectroscopy and Related Phenomena

JF - Journal of Electron Spectroscopy and Related Phenomena

T2 - 8th International Conference on Electronic Spectroscopy and Structure (ICESS-8)

Y2 - 8 August 2000 through 12 August 2000

ER -

Real-time monitoring of the growth and decomposition of SiO₂ layers on Si(001) by a combined method of RHEED and AES

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