Real-time observation of initial thermal oxidation on Si(110)-16×2 surface by photoemission spectroscopy

M. Suemitsu; A. Kato; H. Togashi; A. Konno; Y. Yamamoto; Y. Teraoka; A. Yoshigoe; Y. Enta; Y. Narita

doi:10.1149/1.2356291

Real-time observation of initial thermal oxidation on Si(110)-16×2 surface by photoemission spectroscopy

M. Suemitsu, A. Kato, H. Togashi, A. Konno, Y. Yamamoto, Y. Teraoka, A. Yoshigoe, Y. Enta, Y. Narita

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Kinetics of initial oxidation of Si(110)-16×2 surface has been investigated by using real-time photoemission spectroscopy. One of the most striking features of Si(110) oxidation, in comparison with that of Si(001) surface, is the occurrence of an extremely rapid oxidation in its early stage. Only 15 s after introduction of ∼10^-5 Pa oxygen molecules at 540°C, ∼30% of the Si(110) surface is covered with oxide. This rapid initial oxidation can be related to oxidation at or around the adatom clusters which are reportedly the major constituent of the 16×2 reconstruction on this Si(110) surface. copyright The Electrochemical Society.

Original language	English
Title of host publication	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2
Subtitle of host publication	New Materials, Processes, and Equipment
Publisher	Electrochemical Society Inc.
Pages	311-316
Number of pages	6
Edition	2
ISBN (Electronic)	1566775027
DOIs	https://doi.org/10.1149/1.2356291
Publication status	Published - 2006
Externally published	Yes
Event	Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3

Publication series

Name	ECS Transactions
Number	2
Volume	3
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting
Country/Territory	Mexico
City	Cancun
Period	06/10/29 → 06/11/3

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.2356291

Cite this

Suemitsu, M., Kato, A., Togashi, H., Konno, A., Yamamoto, Y., Teraoka, Y., Yoshigoe, A., Enta, Y., & Narita, Y. (2006). Real-time observation of initial thermal oxidation on Si(110)-16×2 surface by photoemission spectroscopy. In Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment (2 ed., pp. 311-316). (ECS Transactions; Vol. 3, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/1.2356291

Real-time observation of initial thermal oxidation on Si(110)-16×2 surface by photoemission spectroscopy. / Suemitsu, M.; Kato, A.; Togashi, H. et al.
Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. 2. ed. Electrochemical Society Inc., 2006. p. 311-316 (ECS Transactions; Vol. 3, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Suemitsu, M, Kato, A, Togashi, H, Konno, A, Yamamoto, Y, Teraoka, Y, Yoshigoe, A, Enta, Y & Narita, Y 2006, Real-time observation of initial thermal oxidation on Si(110)-16×2 surface by photoemission spectroscopy. in Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. 2 edn, ECS Transactions, no. 2, vol. 3, Electrochemical Society Inc., pp. 311-316, Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting, Cancun, Mexico, 06/10/29. https://doi.org/10.1149/1.2356291

Suemitsu M, Kato A, Togashi H, Konno A, Yamamoto Y, Teraoka Y et al. Real-time observation of initial thermal oxidation on Si(110)-16×2 surface by photoemission spectroscopy. In Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2: New Materials, Processes, and Equipment. 2 ed. Electrochemical Society Inc. 2006. p. 311-316. (ECS Transactions; 2). doi: 10.1149/1.2356291

@inproceedings{88c5a1993d604b85aca2cdf94982201f,

title = "Real-time observation of initial thermal oxidation on Si(110)-16×2 surface by photoemission spectroscopy",

abstract = "Kinetics of initial oxidation of Si(110)-16×2 surface has been investigated by using real-time photoemission spectroscopy. One of the most striking features of Si(110) oxidation, in comparison with that of Si(001) surface, is the occurrence of an extremely rapid oxidation in its early stage. Only 15 s after introduction of ∼10-5 Pa oxygen molecules at 540°C, ∼30% of the Si(110) surface is covered with oxide. This rapid initial oxidation can be related to oxidation at or around the adatom clusters which are reportedly the major constituent of the 16×2 reconstruction on this Si(110) surface. copyright The Electrochemical Society.",

author = "M. Suemitsu and A. Kato and H. Togashi and A. Konno and Y. Yamamoto and Y. Teraoka and A. Yoshigoe and Y. Enta and Y. Narita",

year = "2006",

doi = "10.1149/1.2356291",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "2",

pages = "311--316",

booktitle = "Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2",

edition = "2",

note = "Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

}

TY - GEN

T1 - Real-time observation of initial thermal oxidation on Si(110)-16×2 surface by photoemission spectroscopy

AU - Suemitsu, M.

AU - Kato, A.

AU - Togashi, H.

AU - Konno, A.

AU - Yamamoto, Y.

AU - Teraoka, Y.

AU - Yoshigoe, A.

AU - Enta, Y.

AU - Narita, Y.

PY - 2006

Y1 - 2006

N2 - Kinetics of initial oxidation of Si(110)-16×2 surface has been investigated by using real-time photoemission spectroscopy. One of the most striking features of Si(110) oxidation, in comparison with that of Si(001) surface, is the occurrence of an extremely rapid oxidation in its early stage. Only 15 s after introduction of ∼10-5 Pa oxygen molecules at 540°C, ∼30% of the Si(110) surface is covered with oxide. This rapid initial oxidation can be related to oxidation at or around the adatom clusters which are reportedly the major constituent of the 16×2 reconstruction on this Si(110) surface. copyright The Electrochemical Society.

AB - Kinetics of initial oxidation of Si(110)-16×2 surface has been investigated by using real-time photoemission spectroscopy. One of the most striking features of Si(110) oxidation, in comparison with that of Si(001) surface, is the occurrence of an extremely rapid oxidation in its early stage. Only 15 s after introduction of ∼10-5 Pa oxygen molecules at 540°C, ∼30% of the Si(110) surface is covered with oxide. This rapid initial oxidation can be related to oxidation at or around the adatom clusters which are reportedly the major constituent of the 16×2 reconstruction on this Si(110) surface. copyright The Electrochemical Society.

UR - http://www.scopus.com/inward/record.url?scp=33846944374&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846944374&partnerID=8YFLogxK

U2 - 10.1149/1.2356291

DO - 10.1149/1.2356291

M3 - Conference contribution

AN - SCOPUS:33846944374

T3 - ECS Transactions

SP - 311

EP - 316

BT - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2

PB - Electrochemical Society Inc.

T2 - Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting

Y2 - 29 October 2006 through 3 November 2006

ER -

Real-time observation of initial thermal oxidation on Si(110)-16×2 surface by photoemission spectroscopy

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this