Recent achievements in the reliability of InP-based HEMTs

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The current understanding of reliability issues for InP HEMTs is reviewed. To date, the origin of some instability and degradation phenomena have been identified and the solutions to eliminate or mitigate them have been found. On the other hand, some degradation phenomena are quite complicated and are still under investigation. The increase of drain resistance is one of them. This might be related to the hot electron effect, but it is still an open question as to where and how it happens. Some efforts at solving this mystery, including cathodoluminescence studies, are presented.

Original languageEnglish
Pages (from-to)4378-4383
Number of pages6
JournalThin Solid Films
Issue number10
Publication statusPublished - 2007 Mar 26


  • FET
  • HEMT
  • InP
  • Reliability


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