Recent advance in single-ion implantation method for single-dopant devices

Takahiro Shinada; Masahiro Hori; Keigo Taira; Tetsuo Endoh; Iwao Ohdomari

doi:10.1109/IWJT.2009.5166228

Recent advance in single-ion implantation method for single-dopant devices

Takahiro Shinada, Masahiro Hori, Keigo Taira, Tetsuo Endoh, Iwao Ohdomari

Waseda University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Original language	English
Title of host publication	Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009
Pages	96-99
Number of pages	4
DOIs	https://doi.org/10.1109/IWJT.2009.5166228
Publication status	Published - 2009
Event	9th International Workshop on Junction Technology, IWJT 2009 - Kyoto, Japan Duration: 2009 Jun 11 → 2009 Jun 12

Publication series

Name	Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009

Conference

Conference	9th International Workshop on Junction Technology, IWJT 2009
Country/Territory	Japan
City	Kyoto
Period	09/6/11 → 09/6/12

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10.1109/IWJT.2009.5166228

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Shinada, T., Hori, M., Taira, K., Endoh, T., & Ohdomari, I. (2009). Recent advance in single-ion implantation method for single-dopant devices. In Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009 (pp. 96-99). Article 5166228 (Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009). https://doi.org/10.1109/IWJT.2009.5166228

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title = "Recent advance in single-ion implantation method for single-dopant devices",

author = "Takahiro Shinada and Masahiro Hori and Keigo Taira and Tetsuo Endoh and Iwao Ohdomari",

year = "2009",

doi = "10.1109/IWJT.2009.5166228",

language = "English",

isbn = "9781424439447",

series = "Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009",

pages = "96--99",

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Shinada, T, Hori, M, Taira, K, Endoh, T & Ohdomari, I 2009, Recent advance in single-ion implantation method for single-dopant devices. in Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009., 5166228, Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009, pp. 96-99, 9th International Workshop on Junction Technology, IWJT 2009, Kyoto, Japan, 09/6/11. https://doi.org/10.1109/IWJT.2009.5166228

Recent advance in single-ion implantation method for single-dopant devices. / Shinada, Takahiro; Hori, Masahiro; Taira, Keigo et al.
Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009. 2009. p. 96-99 5166228 (Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Recent advance in single-ion implantation method for single-dopant devices

AU - Shinada, Takahiro

AU - Hori, Masahiro

AU - Taira, Keigo

AU - Endoh, Tetsuo

AU - Ohdomari, Iwao

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SN - 9781424439447

T3 - Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009

SP - 96

EP - 99

BT - Extended Abstracts of the 9th International Workshop on Junction Technology, IWJT 2009

T2 - 9th International Workshop on Junction Technology, IWJT 2009

Y2 - 11 June 2009 through 12 June 2009

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Recent advance in single-ion implantation method for single-dopant devices

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