TY - JOUR
T1 - Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors
AU - Yonenaga, I.
AU - Ohno, Y.
AU - Taishi, T.
AU - Tokumoto, Y.
PY - 2009/12/15
Y1 - 2009/12/15
N2 - The mechanical strengths and dislocation activities in wide band-gap semiconductors SiC, AlN, GaN, ZnO and ZnSe at elevated temperatures are summarized. From investigations by indentation hardness test and compressive deformation, activation energies for dislocation motion are evaluated to be 2-2.7, 0.7-1.2 and 0.5-0.7 eV in GaN, ZnO and ZnSe, respectively. Dislocations in II-VI compounds ZnO and ZnSe are essentially mobile.
AB - The mechanical strengths and dislocation activities in wide band-gap semiconductors SiC, AlN, GaN, ZnO and ZnSe at elevated temperatures are summarized. From investigations by indentation hardness test and compressive deformation, activation energies for dislocation motion are evaluated to be 2-2.7, 0.7-1.2 and 0.5-0.7 eV in GaN, ZnO and ZnSe, respectively. Dislocations in II-VI compounds ZnO and ZnSe are essentially mobile.
KW - Dislocation mobility
KW - Mechanical stability
KW - Wide band-gap semiconductors
UR - http://www.scopus.com/inward/record.url?scp=74349127290&partnerID=8YFLogxK
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U2 - 10.1016/j.physb.2009.08.196
DO - 10.1016/j.physb.2009.08.196
M3 - Article
AN - SCOPUS:74349127290
SN - 0921-4526
VL - 404
SP - 4999
EP - 5001
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
IS - 23-24
ER -