Recombination activity of dislocations on (0 0 0 1) introduced in wurtzite ZnO at elevated temperatures

Yutaka Ohno; Yuki Tokumoto; Ichiro Yonenaga; Katsushi Fujii; Takafumi Yao; Naoki Yamamoto

doi:10.1016/j.physb.2011.08.053

Recombination activity of dislocations on (0 0 0 1) introduced in wurtzite ZnO at elevated temperatures

Yutaka Ohno, Yuki Tokumoto, Ichiro Yonenaga, Katsushi Fujii, Takafumi Yao, Naoki Yamamoto

Materials Design Division

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The activity for non-radiative recombination at dislocations on (0 0 0 1) basal planes was examined in wurtzite ZnO bulk single crystals. In panchromatic cathodoluminescence intensity maps, the dislocations did not exhibit apparent contrast when they were introduced at elevated temperatures of 923-1073 K, while the dislocations introduced at low temperatures (below 623 K) were observed as dark bands. It was suggested that the dislocations formed complexes involving point defects, via the thermal migration of point defects at elevated temperatures, resulting in the suppression of the recombination activity. The complexes did not influence the existing emission lines in pre-dislocated crystals.

Original language	English
Pages (from-to)	2886-2888
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	407
Issue number	15
DOIs	https://doi.org/10.1016/j.physb.2011.08.053
Publication status	Published - 2012 Aug 1

Keywords

Dislocations
Recombination activity
ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2011.08.053

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title = "Recombination activity of dislocations on (0 0 0 1) introduced in wurtzite ZnO at elevated temperatures",

abstract = "The activity for non-radiative recombination at dislocations on (0 0 0 1) basal planes was examined in wurtzite ZnO bulk single crystals. In panchromatic cathodoluminescence intensity maps, the dislocations did not exhibit apparent contrast when they were introduced at elevated temperatures of 923-1073 K, while the dislocations introduced at low temperatures (below 623 K) were observed as dark bands. It was suggested that the dislocations formed complexes involving point defects, via the thermal migration of point defects at elevated temperatures, resulting in the suppression of the recombination activity. The complexes did not influence the existing emission lines in pre-dislocated crystals.",

keywords = "Dislocations, Recombination activity, ZnO",

author = "Yutaka Ohno and Yuki Tokumoto and Ichiro Yonenaga and Katsushi Fujii and Takafumi Yao and Naoki Yamamoto",

note = "Funding Information: A part of this work was supported by the Integrated Materials Research Center for a Low-Carbon Society, IMR, Tohoku University, Japan (2010–2011), and Nanotechnology Network Project of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan, at Tokyo Institute of Technology.",

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doi = "10.1016/j.physb.2011.08.053",

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volume = "407",

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journal = "Physica B: Condensed Matter",

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T1 - Recombination activity of dislocations on (0 0 0 1) introduced in wurtzite ZnO at elevated temperatures

AU - Ohno, Yutaka

AU - Tokumoto, Yuki

AU - Yonenaga, Ichiro

AU - Fujii, Katsushi

AU - Yao, Takafumi

AU - Yamamoto, Naoki

N1 - Funding Information: A part of this work was supported by the Integrated Materials Research Center for a Low-Carbon Society, IMR, Tohoku University, Japan (2010–2011), and Nanotechnology Network Project of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan, at Tokyo Institute of Technology.

PY - 2012/8/1

Y1 - 2012/8/1

N2 - The activity for non-radiative recombination at dislocations on (0 0 0 1) basal planes was examined in wurtzite ZnO bulk single crystals. In panchromatic cathodoluminescence intensity maps, the dislocations did not exhibit apparent contrast when they were introduced at elevated temperatures of 923-1073 K, while the dislocations introduced at low temperatures (below 623 K) were observed as dark bands. It was suggested that the dislocations formed complexes involving point defects, via the thermal migration of point defects at elevated temperatures, resulting in the suppression of the recombination activity. The complexes did not influence the existing emission lines in pre-dislocated crystals.

AB - The activity for non-radiative recombination at dislocations on (0 0 0 1) basal planes was examined in wurtzite ZnO bulk single crystals. In panchromatic cathodoluminescence intensity maps, the dislocations did not exhibit apparent contrast when they were introduced at elevated temperatures of 923-1073 K, while the dislocations introduced at low temperatures (below 623 K) were observed as dark bands. It was suggested that the dislocations formed complexes involving point defects, via the thermal migration of point defects at elevated temperatures, resulting in the suppression of the recombination activity. The complexes did not influence the existing emission lines in pre-dislocated crystals.

KW - Dislocations

KW - Recombination activity

KW - ZnO

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DO - 10.1016/j.physb.2011.08.053

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SN - 0921-4526

VL - 407

SP - 2886

EP - 2888

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 15

ER -

Recombination activity of dislocations on (0 0 0 1) introduced in wurtzite ZnO at elevated temperatures

Abstract

Keywords

ASJC Scopus subject areas

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