Recombination dynamics of a 268 nm emission peak in Al 0.53in0.11Ga0.36N/Al0.58in 0.02Ga0.40N multiple quantum wells

T. Onuma; S. Keller; S. P. DenBaars; J. S. Speck; S. Nakamura; U. K. Mishra; T. Sota; S. F. Chichibu

doi:10.1063/1.2186109

Recombination dynamics of a 268 nm emission peak in Al _0.53in_0.11Ga_0.36N/Al_0.58in _0.02Ga_0.40N multiple quantum wells

T. Onuma, S. Keller, S. P. DenBaars, J. S. Speck, S. Nakamura, U. K. Mishra, T. Sota, S. F. Chichibu

IMRAM - Division of Measurements

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Abstract

Recombination dynamics of the 268 nm photoluminescence (PL) peak in a quaternary Al_0.53In_0.36Ga_0.36N/Al _0.58In_0.02Ga_0.40N multiple quantum well (MQW) grown on relaxed AlGaN templates were studied. Although the polarization field in the compressively strained Al_0.53In_0.11Ga _0.36N wells was as high as 1.6 MV/cm, the value of integrated PL intensity at 300 K divided by that at 8 K (η_int) was as high as 1.2%. The value was similar to that obtained for the 285 nm PL peak in an Al_0.30Ga_0.70N/Al_0.70Ga_0.30N MQW (1.3%), though the AlN molar fraction in the wells was higher by a factor of 1.7. According to these results and the fact that time-resolved PL signal exhibited a stretched exponential decay shape, the improved η_int of the AlInGaN wells was attributed to a beneficial effect of the exciton localization as is the case with InGaN alloys; doping or alloying with InN was confirmed to work also on AlGaN in improving η_int to realize deep UV optoelectronic devices.

Original language	English
Article number	111912
Journal	Applied Physics Letters
Volume	88
Issue number	11
DOIs	https://doi.org/10.1063/1.2186109
Publication status	Published - 2006

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title = "Recombination dynamics of a 268 nm emission peak in Al 0.53in0.11Ga0.36N/Al0.58in 0.02Ga0.40N multiple quantum wells",

abstract = "Recombination dynamics of the 268 nm photoluminescence (PL) peak in a quaternary Al0.53In0.36Ga0.36N/Al 0.58In0.02Ga0.40N multiple quantum well (MQW) grown on relaxed AlGaN templates were studied. Although the polarization field in the compressively strained Al0.53In0.11Ga 0.36N wells was as high as 1.6 MV/cm, the value of integrated PL intensity at 300 K divided by that at 8 K (ηint) was as high as 1.2%. The value was similar to that obtained for the 285 nm PL peak in an Al0.30Ga0.70N/Al0.70Ga0.30N MQW (1.3%), though the AlN molar fraction in the wells was higher by a factor of 1.7. According to these results and the fact that time-resolved PL signal exhibited a stretched exponential decay shape, the improved ηint of the AlInGaN wells was attributed to a beneficial effect of the exciton localization as is the case with InGaN alloys; doping or alloying with InN was confirmed to work also on AlGaN in improving ηint to realize deep UV optoelectronic devices.",

author = "T. Onuma and S. Keller and DenBaars, {S. P.} and Speck, {J. S.} and S. Nakamura and Mishra, {U. K.} and T. Sota and Chichibu, {S. F.}",

note = "Funding Information: This work was supported in part by the 21st Century COE program “Promotion of Creative Interdisciplinary Materials Science for Novel Functions” under MEXT, Japan. ",

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doi = "10.1063/1.2186109",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

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T1 - Recombination dynamics of a 268 nm emission peak in Al 0.53in0.11Ga0.36N/Al0.58in 0.02Ga0.40N multiple quantum wells

AU - Onuma, T.

AU - Keller, S.

AU - DenBaars, S. P.

AU - Speck, J. S.

AU - Nakamura, S.

AU - Mishra, U. K.

AU - Sota, T.

AU - Chichibu, S. F.

N1 - Funding Information: This work was supported in part by the 21st Century COE program “Promotion of Creative Interdisciplinary Materials Science for Novel Functions” under MEXT, Japan.

PY - 2006

Y1 - 2006

N2 - Recombination dynamics of the 268 nm photoluminescence (PL) peak in a quaternary Al0.53In0.36Ga0.36N/Al 0.58In0.02Ga0.40N multiple quantum well (MQW) grown on relaxed AlGaN templates were studied. Although the polarization field in the compressively strained Al0.53In0.11Ga 0.36N wells was as high as 1.6 MV/cm, the value of integrated PL intensity at 300 K divided by that at 8 K (ηint) was as high as 1.2%. The value was similar to that obtained for the 285 nm PL peak in an Al0.30Ga0.70N/Al0.70Ga0.30N MQW (1.3%), though the AlN molar fraction in the wells was higher by a factor of 1.7. According to these results and the fact that time-resolved PL signal exhibited a stretched exponential decay shape, the improved ηint of the AlInGaN wells was attributed to a beneficial effect of the exciton localization as is the case with InGaN alloys; doping or alloying with InN was confirmed to work also on AlGaN in improving ηint to realize deep UV optoelectronic devices.

AB - Recombination dynamics of the 268 nm photoluminescence (PL) peak in a quaternary Al0.53In0.36Ga0.36N/Al 0.58In0.02Ga0.40N multiple quantum well (MQW) grown on relaxed AlGaN templates were studied. Although the polarization field in the compressively strained Al0.53In0.11Ga 0.36N wells was as high as 1.6 MV/cm, the value of integrated PL intensity at 300 K divided by that at 8 K (ηint) was as high as 1.2%. The value was similar to that obtained for the 285 nm PL peak in an Al0.30Ga0.70N/Al0.70Ga0.30N MQW (1.3%), though the AlN molar fraction in the wells was higher by a factor of 1.7. According to these results and the fact that time-resolved PL signal exhibited a stretched exponential decay shape, the improved ηint of the AlInGaN wells was attributed to a beneficial effect of the exciton localization as is the case with InGaN alloys; doping or alloying with InN was confirmed to work also on AlGaN in improving ηint to realize deep UV optoelectronic devices.

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Recombination dynamics of a 268 nm emission peak in Al _0.53in_0.11Ga_0.36N/Al_0.58in _0.02Ga_0.40N multiple quantum wells

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