Recombination dynamics of excitons in Mg0.11 Zn0.89 O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy

Masashi Kubota; Takeyoshi Onuma; Atsushi Tsukazaki; Akira Ohtomo; Masashi Kawasaki; Takayuki Sota; Shigefusa F. Chichibu

doi:10.1063/1.2719168

Recombination dynamics of excitons in Mg0.11 Zn0.89 O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy

Masashi Kubota, Takeyoshi Onuma, Atsushi Tsukazaki, Akira Ohtomo, Masashi Kawasaki, Takayuki Sota, Shigefusa F. Chichibu

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Recombination dynamics of excitons in Mg0.11 Zn0.89 O epilayers grown by laser-assisted molecular-beam epitaxy on a ScAlMg O4 substrate were investigated. By using the MgZnO high-temperature-annealed self-buffer layer (HITAB), the value of full width at half maximum of the near-band-edge (NBE) photoluminescence (PL) peak at 3.6 eV was decreased from 133 to 94 meV at 293 K, and the intensity ratio of the NBE emission to the deep emission band centered around 2.2 eV was increased by a factor of 3. Also, the PL lifetime of the NBE peak at 293 K under the excitation density of 1 μJ cm2 was increased from 49 to 60 ps. These results suggest that HITAB gave rise to improved alloy compositional homogeneity and reduced concentration of point defects.

Original language	English
Article number	141903
Journal	Applied Physics Letters
Volume	90
Issue number	14
DOIs	https://doi.org/10.1063/1.2719168
Publication status	Published - 2007

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title = "Recombination dynamics of excitons in Mg0.11 Zn0.89 O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy",

abstract = "Recombination dynamics of excitons in Mg0.11 Zn0.89 O epilayers grown by laser-assisted molecular-beam epitaxy on a ScAlMg O4 substrate were investigated. By using the MgZnO high-temperature-annealed self-buffer layer (HITAB), the value of full width at half maximum of the near-band-edge (NBE) photoluminescence (PL) peak at 3.6 eV was decreased from 133 to 94 meV at 293 K, and the intensity ratio of the NBE emission to the deep emission band centered around 2.2 eV was increased by a factor of 3. Also, the PL lifetime of the NBE peak at 293 K under the excitation density of 1 μJ cm2 was increased from 49 to 60 ps. These results suggest that HITAB gave rise to improved alloy compositional homogeneity and reduced concentration of point defects.",

author = "Masashi Kubota and Takeyoshi Onuma and Atsushi Tsukazaki and Akira Ohtomo and Masashi Kawasaki and Takayuki Sota and Chichibu, {Shigefusa F.}",

note = "Funding Information: This work was supported in part by the 21st Century COE program “Promotion of Creative Interdisciplinary Materials Science for Novel Functions,” Grant-in-Aid for Scientific Research Nos. 16360146 and 14GS0204 by MEXT, Japan, the interuniversity cooperative program of IMR, Tohoku University, and the Inamori Foundation.",

year = "2007",

doi = "10.1063/1.2719168",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Recombination dynamics of excitons in Mg0.11 Zn0.89 O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy

AU - Kubota, Masashi

AU - Onuma, Takeyoshi

AU - Tsukazaki, Atsushi

AU - Ohtomo, Akira

AU - Kawasaki, Masashi

AU - Sota, Takayuki

AU - Chichibu, Shigefusa F.

N1 - Funding Information: This work was supported in part by the 21st Century COE program “Promotion of Creative Interdisciplinary Materials Science for Novel Functions,” Grant-in-Aid for Scientific Research Nos. 16360146 and 14GS0204 by MEXT, Japan, the interuniversity cooperative program of IMR, Tohoku University, and the Inamori Foundation.

PY - 2007

Y1 - 2007

N2 - Recombination dynamics of excitons in Mg0.11 Zn0.89 O epilayers grown by laser-assisted molecular-beam epitaxy on a ScAlMg O4 substrate were investigated. By using the MgZnO high-temperature-annealed self-buffer layer (HITAB), the value of full width at half maximum of the near-band-edge (NBE) photoluminescence (PL) peak at 3.6 eV was decreased from 133 to 94 meV at 293 K, and the intensity ratio of the NBE emission to the deep emission band centered around 2.2 eV was increased by a factor of 3. Also, the PL lifetime of the NBE peak at 293 K under the excitation density of 1 μJ cm2 was increased from 49 to 60 ps. These results suggest that HITAB gave rise to improved alloy compositional homogeneity and reduced concentration of point defects.

AB - Recombination dynamics of excitons in Mg0.11 Zn0.89 O epilayers grown by laser-assisted molecular-beam epitaxy on a ScAlMg O4 substrate were investigated. By using the MgZnO high-temperature-annealed self-buffer layer (HITAB), the value of full width at half maximum of the near-band-edge (NBE) photoluminescence (PL) peak at 3.6 eV was decreased from 133 to 94 meV at 293 K, and the intensity ratio of the NBE emission to the deep emission band centered around 2.2 eV was increased by a factor of 3. Also, the PL lifetime of the NBE peak at 293 K under the excitation density of 1 μJ cm2 was increased from 49 to 60 ps. These results suggest that HITAB gave rise to improved alloy compositional homogeneity and reduced concentration of point defects.

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Recombination dynamics of excitons in Mg0.11 Zn0.89 O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy

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