Recombination dynamics of localized excitons in cubic InxGa 1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate

S. F. Chichibu; T. Onuma; T. Aoyama; K. Nakajima; P. Ahmet; T. Chikyow; T. Sota; S. P. DenBaars; S. Nakamura; T. Kitamura; Y. Ishida; H. Okumura

Recombination dynamics of localized excitons in cubic In_xGa _1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate

S. F. Chichibu, T. Onuma, T. Aoyama, K. Nakajima, P. Ahmet, T. Chikyow, T. Sota, S. P. DenBaars, S. Nakamura, T. Kitamura, Y. Ishida, H. Okumura

IMRAM - Division of Measurements

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45 Citations (Scopus)

Abstract

The recombination dynamics of localized excitons in cubic In _xGa_1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate were investigated. It was observed that the Stark effect due either to spontaneous or piezoelectric polarization was inactive in cubic polytypes. The time-resolved photoluminescence (TRPL) signal showed stretched exponential decay and spectral redshift with time after excitation up to 300 K.

Original language	English
Pages (from-to)	1856-1862
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	4
Publication status	Published - 2003 Jul

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Chichibu, S. F., Onuma, T., Aoyama, T., Nakajima, K., Ahmet, P., Chikyow, T., Sota, T., DenBaars, S. P., Nakamura, S., Kitamura, T., Ishida, Y., & Okumura, H. (2003). Recombination dynamics of localized excitons in cubic In_xGa _1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21(4), 1856-1862.

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title = "Recombination dynamics of localized excitons in cubic InxGa 1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate",

abstract = "The recombination dynamics of localized excitons in cubic In xGa1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate were investigated. It was observed that the Stark effect due either to spontaneous or piezoelectric polarization was inactive in cubic polytypes. The time-resolved photoluminescence (TRPL) signal showed stretched exponential decay and spectral redshift with time after excitation up to 300 K.",

author = "Chichibu, {S. F.} and T. Onuma and T. Aoyama and K. Nakajima and P. Ahmet and T. Chikyow and T. Sota and DenBaars, {S. P.} and S. Nakamura and T. Kitamura and Y. Ishida and H. Okumura",

year = "2003",

month = jul,

language = "English",

volume = "21",

pages = "1856--1862",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

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number = "4",

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Chichibu, SF, Onuma, T, Aoyama, T, Nakajima, K, Ahmet, P, Chikyow, T, Sota, T, DenBaars, SP, Nakamura, S, Kitamura, T, Ishida, Y & Okumura, H 2003, 'Recombination dynamics of localized excitons in cubic In_xGa _1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 21, no. 4, pp. 1856-1862.

Recombination dynamics of localized excitons in cubic In_xGa _1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate. / Chichibu, S. F.; Onuma, T.; Aoyama, T. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 4, 07.2003, p. 1856-1862.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Recombination dynamics of localized excitons in cubic InxGa 1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate

AU - Chichibu, S. F.

AU - Onuma, T.

AU - Aoyama, T.

AU - Nakajima, K.

AU - Ahmet, P.

AU - Chikyow, T.

AU - Sota, T.

AU - DenBaars, S. P.

AU - Nakamura, S.

AU - Kitamura, T.

AU - Ishida, Y.

AU - Okumura, H.

PY - 2003/7

Y1 - 2003/7

N2 - The recombination dynamics of localized excitons in cubic In xGa1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate were investigated. It was observed that the Stark effect due either to spontaneous or piezoelectric polarization was inactive in cubic polytypes. The time-resolved photoluminescence (TRPL) signal showed stretched exponential decay and spectral redshift with time after excitation up to 300 K.

AB - The recombination dynamics of localized excitons in cubic In xGa1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate were investigated. It was observed that the Stark effect due either to spontaneous or piezoelectric polarization was inactive in cubic polytypes. The time-resolved photoluminescence (TRPL) signal showed stretched exponential decay and spectral redshift with time after excitation up to 300 K.

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M3 - Article

AN - SCOPUS:0141792944

SN - 1071-1023

VL - 21

SP - 1856

EP - 1862

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Recombination dynamics of localized excitons in cubic In_xGa _1-xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C-SiC substrate

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