Reconfigurable characteristics of spintronics-based MOSFETs for nonvolatile integrated circuits

Tomoaki Inokuchi; Takao Marukame; Tetsufumi Tanamoto; Hideyuki Sugiyama; Mizue Ishikawa; Yoshiaki Saito

doi:10.1109/VLSIT.2010.5556194

Reconfigurable characteristics of spintronics-based MOSFETs for nonvolatile integrated circuits

Tomoaki Inokuchi, Takao Marukame, Tetsufumi Tanamoto, Hideyuki Sugiyama, Mizue Ishikawa, Yoshiaki Saito

Center for Innovative Integrated Electronic Systems (CIES)

Toshiba Corporation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Citations (Scopus)

Abstract

Reconfigurability of a novel spintronics-based MOSFET; "Spin-transfer- Torque-Switching MOSFET (STS-MOSFET)" was successfully realized in the transport properties. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 10⁵ cycles. It was clarified that the read and write characteristics (i.e., MC ratio and write voltage) can be improved by choosing connection configurations of the source and the drain in the STS-MOSFETs. Large scale circuit simulations for various circuits in FPGA revealed that the critical path delay is significantly improved by using the STS-MOSFETs. The overall properties of the STS-MOSFETs show great potentialities for future reconfigurable integrated circuits based on CMOS technology.

Original language	English
Title of host publication	2010 Symposium on VLSI Technology, VLSIT 2010
Pages	119-120
Number of pages	2
DOIs	https://doi.org/10.1109/VLSIT.2010.5556194
Publication status	Published - 2010
Event	2010 Symposium on VLSI Technology, VLSIT 2010 - Honolulu, HI, United States Duration: 2010 Jun 15 → 2010 Jun 17

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Conference

Conference	2010 Symposium on VLSI Technology, VLSIT 2010
Country/Territory	United States
City	Honolulu, HI
Period	10/6/15 → 10/6/17

Keywords

Spin dependent transport
Spin- MOSFET
Spin-transfer-torque-switching

Access to Document

10.1109/VLSIT.2010.5556194

Cite this

Inokuchi, T., Marukame, T., Tanamoto, T., Sugiyama, H., Ishikawa, M., & Saito, Y. (2010). Reconfigurable characteristics of spintronics-based MOSFETs for nonvolatile integrated circuits. In 2010 Symposium on VLSI Technology, VLSIT 2010 (pp. 119-120). Article 5556194 (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2010.5556194

@inproceedings{344cbe9b685b4163a94e039f3443a6c3,

title = "Reconfigurable characteristics of spintronics-based MOSFETs for nonvolatile integrated circuits",

abstract = "Reconfigurability of a novel spintronics-based MOSFET; {"}Spin-transfer- Torque-Switching MOSFET (STS-MOSFET){"} was successfully realized in the transport properties. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 105 cycles. It was clarified that the read and write characteristics (i.e., MC ratio and write voltage) can be improved by choosing connection configurations of the source and the drain in the STS-MOSFETs. Large scale circuit simulations for various circuits in FPGA revealed that the critical path delay is significantly improved by using the STS-MOSFETs. The overall properties of the STS-MOSFETs show great potentialities for future reconfigurable integrated circuits based on CMOS technology.",

keywords = "Spin dependent transport, Spin- MOSFET, Spin-transfer-torque-switching",

author = "Tomoaki Inokuchi and Takao Marukame and Tetsufumi Tanamoto and Hideyuki Sugiyama and Mizue Ishikawa and Yoshiaki Saito",

year = "2010",

doi = "10.1109/VLSIT.2010.5556194",

language = "English",

isbn = "9781424476374",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "119--120",

booktitle = "2010 Symposium on VLSI Technology, VLSIT 2010",

note = "2010 Symposium on VLSI Technology, VLSIT 2010 ; Conference date: 15-06-2010 Through 17-06-2010",

}

Inokuchi, T, Marukame, T, Tanamoto, T, Sugiyama, H, Ishikawa, M & Saito, Y 2010, Reconfigurable characteristics of spintronics-based MOSFETs for nonvolatile integrated circuits. in 2010 Symposium on VLSI Technology, VLSIT 2010., 5556194, Digest of Technical Papers - Symposium on VLSI Technology, pp. 119-120, 2010 Symposium on VLSI Technology, VLSIT 2010, Honolulu, HI, United States, 10/6/15. https://doi.org/10.1109/VLSIT.2010.5556194

Reconfigurable characteristics of spintronics-based MOSFETs for nonvolatile integrated circuits. / Inokuchi, Tomoaki; Marukame, Takao; Tanamoto, Tetsufumi et al.
2010 Symposium on VLSI Technology, VLSIT 2010. 2010. p. 119-120 5556194 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Reconfigurable characteristics of spintronics-based MOSFETs for nonvolatile integrated circuits

AU - Inokuchi, Tomoaki

AU - Marukame, Takao

AU - Tanamoto, Tetsufumi

AU - Sugiyama, Hideyuki

AU - Ishikawa, Mizue

AU - Saito, Yoshiaki

PY - 2010

Y1 - 2010

N2 - Reconfigurability of a novel spintronics-based MOSFET; "Spin-transfer- Torque-Switching MOSFET (STS-MOSFET)" was successfully realized in the transport properties. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 105 cycles. It was clarified that the read and write characteristics (i.e., MC ratio and write voltage) can be improved by choosing connection configurations of the source and the drain in the STS-MOSFETs. Large scale circuit simulations for various circuits in FPGA revealed that the critical path delay is significantly improved by using the STS-MOSFETs. The overall properties of the STS-MOSFETs show great potentialities for future reconfigurable integrated circuits based on CMOS technology.

AB - Reconfigurability of a novel spintronics-based MOSFET; "Spin-transfer- Torque-Switching MOSFET (STS-MOSFET)" was successfully realized in the transport properties. The device showed magnetocurrent (MC) and write characteristics with the endurance of over 105 cycles. It was clarified that the read and write characteristics (i.e., MC ratio and write voltage) can be improved by choosing connection configurations of the source and the drain in the STS-MOSFETs. Large scale circuit simulations for various circuits in FPGA revealed that the critical path delay is significantly improved by using the STS-MOSFETs. The overall properties of the STS-MOSFETs show great potentialities for future reconfigurable integrated circuits based on CMOS technology.

KW - Spin dependent transport

KW - Spin- MOSFET

KW - Spin-transfer-torque-switching

UR - http://www.scopus.com/inward/record.url?scp=77957872203&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957872203&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.2010.5556194

DO - 10.1109/VLSIT.2010.5556194

M3 - Conference contribution

AN - SCOPUS:77957872203

SN - 9781424476374

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 119

EP - 120

BT - 2010 Symposium on VLSI Technology, VLSIT 2010

T2 - 2010 Symposium on VLSI Technology, VLSIT 2010

Y2 - 15 June 2010 through 17 June 2010

ER -

Reconfigurable characteristics of spintronics-based MOSFETs for nonvolatile integrated circuits

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